Numerical simulation of thermo-mechanical behavior in high power diode laser arrays

Lu, Yuanzheng; Nie, Zhiqiang; Zhang, Pu; Wang, Zhenfu; Xiong, Lixia; Wang, Shuna; Wu, Dihai; Liu, Xingsheng

doi:10.1109/icept.2016.7583094

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…The gap width depends on the contact area between the solder and the chip or heat sink. During the Ansys finite element simulation, in order to facilitate analysis and calculation, it is common to model the chip and its internal structure using a simplified rectangular stack structure [14][15][16][17]. The research object of this study is the F-mount packaged single emitter diode laser with a cavity length of 2 mm.…”

Section: Simulation Of F-mount Packaged Single Emittermentioning

confidence: 99%

Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages

Deng,

Li,

Wang

et al. 2024

Electronics

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The reliability of packaged laser diodes is heavily dependent on the quality of the die attach. Even a small void or delamination may result in a sudden increase in junction temperature, eventually leading to failure of the operation. The contact thermal resistance at the interface between the die attach and the heat sink plays a critical role in thermal management of high-power laser diode packages. This paper focuses on the investigation of interface contact thermal resistance of the die attach using thermal transient analysis. The structure function of the heat flow path in the T3ster thermal resistance testing experiment is utilized. By analyzing the structure function of the transient thermal characteristics, it was determined that interface thermal resistance between the chip and solder was 0.38 K/W, while the resistance between solder and heat sink was 0.36 K/W. The simulation and measurement results showed excellent agreement, indicating that it is possible to accurately predict the interface contact area of the die attach in the F-mount packaged single emitter laser diode. Additionally, the proportion of interface contact thermal resistance in the total package thermal resistance can be used to evaluate the quality of the die attach.

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Section: Simulation Of F-mount Packaged Single Emittermentioning

confidence: 99%

Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages

Deng,

Li,

Wang

et al. 2024

Electronics

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“…Firstly, such devices are promising for use as the basis for ultrafast devices of a new generation [1,2] in industries related to high requirements for reliability [3,4]. Secondly, a high cost of testing and the time constraints on their implementation makes physical and mathematical simulation of aging devices [5] more attractive compared with a classical statistical method of the theory of reliability tests. Degradation of AlGaAs-heterostructures is attributed [6] to diffusion processes in semiconductor layers.…”

Section: Introductionmentioning

confidence: 99%

ABOUT AlGaAs-HETEROSTRUCTURES CVC KINETICS SIMULATION

Ветрова¹,

Kuimov²,

Мешков³

et al. 2019

RENSIT

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A model of degradation of AlGaAs-heterostructures is presented. The model of dissipative processes was extended to the case of a diffusion-blured aluminum profile. The definition of the Г-Х-mixing operator is generalized for potentials without explicit heterojunctions. The effect of degradation processes on inelastic scattering is taken into account by applying the diffusion equation to the optical potential profile. The self-consistency algorithm was optimized in order to reduce the calculation time. This paper proposes a faster method based on the reduction in the number of calculated integrals for electrons density. A number of test structures were simulated via developed algorithm. The deviation of the calculation results from the experimental data on the curvature of CVC initial section does not exceed 3%. Thus, we can conclude that it is expedient to use the model to calculate the kinetics of heterostructures СVC initial section at elevated temperatures, including within the framework of the task of predicting the GIC and MIC UHF reliability indicators based on multilayer AlGaAs-heterostructures.

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