A compact analytical model of current transfer was developed to estimate the characteristics of heterostructured devices. The absence of empirical correction factors and the explicit accounting of the interelectronic interaction differentiates it from previous similar models. The model obtains an estimates of the electron density in the quantum well of the heterostructural channel and applies a self-consistent correction for resonance levels. It also provides accuracy in the positive differential resistance region of the I–V characteristics in the AlGaAs structures, with an average relative error not exceeding 2%. The time complexity of the calculations of the I–V characteristics using this model is several orders of magnitude less than that of calculations using ab initio models. Its high accuracy and low temporal complexity of calculations of I–V characteristics allow this model to be integrated in systems for the design and calculation of reliability indicators for devices, including terahertz devices.
A model of degradation of AlGaAs-heterostructures is presented. The model of dissipative processes was extended to the case of a diffusion-blured aluminum profile. The definition of the Г-Х-mixing operator is generalized for potentials without explicit heterojunctions. The effect of degradation processes on inelastic scattering is taken into account by applying the diffusion equation to the optical potential profile. The self-consistency algorithm was optimized in order to reduce the calculation time. This paper proposes a faster method based on the reduction in the number of calculated integrals for electrons density. A number of test structures were simulated via developed algorithm. The deviation of the calculation results from the experimental data on the curvature of CVC initial section does not exceed 3%. Thus, we can conclude that it is expedient to use the model to calculate the kinetics of heterostructures СVC initial section at elevated temperatures, including within the framework of the task of predicting the GIC and MIC UHF reliability indicators based on multilayer AlGaAs-heterostructures.
When modeling devices based on AlAs/GaAs heterostructures, an important factor to consider is intervalley electron scattering at heterointerfaces. This paper shows an approach to modeling such processes using the Schrödinger equations for the open reservoir-channel-reservoir system. The problem of modeling the intervalley scattering of electrons in the case when the profile of the aluminum fraction is continuous when there are no pronounced heterointerfaces is considered. For the numerical solution of the equations obtained, the method of finite differences is used without reducing the accuracy of the difference scheme to the first order when boundary conditions are considered. The methods of composing the elements of the matrices of system of linear equations to reduce the temporal complexity of the algorithm are considered. Based on the results of the calculation in the two-valley approximation, in comparison with singlevalley calculations, it was concluded that this model can be used to calculate the current-voltage characteristics of AlAs/GaAs heterostructures, taking into account the manufacturing technology and the patterns of degradation during operation, and also in evaluating the reliability parameters of nanoelectronics devices.
A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented. The developed computational algorithm is optimized by the criterion of temporal and spatial complexity. The relative deviation of the calculation results from the experimental data on the curvature of the initial portion of the current- voltage characteristic of the resonant tunnel diodes on AlGaAs- heterostructures is less than 3%.
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