2002
DOI: 10.1016/s0927-0248(02)00069-7
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Microcrystalline silicon–germanium solar cells for multi-junction structures

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Cited by 96 publications
(39 citation statements)
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“…Therefore, the conversion efficiency has a maximum point at the average Ge composition around 5%. The characteristics of SiGe solar cells reported by other researcher [5,6] are also shown together with our results in Fig. 4.…”
Section: Characteristics Of Sige Multicrystal Solar Cellssupporting
confidence: 88%
“…Therefore, the conversion efficiency has a maximum point at the average Ge composition around 5%. The characteristics of SiGe solar cells reported by other researcher [5,6] are also shown together with our results in Fig. 4.…”
Section: Characteristics Of Sige Multicrystal Solar Cellssupporting
confidence: 88%
“…• Isomura et al [58,59], reported a solar cell with 5.6% efficiency with a nc-SiGe base layer as thin as 0.5µm with Ge concentration of 20%. Even though the Fill factors were in the range of 55-60, because of high short circuit currents(I sc ) like 20-25mA/cm 2 high efficiency could be achieved.…”
Section: Device Resultsmentioning
confidence: 99%
“…1-7 µc-SiGe:H features a higher absorption coefficient than microcrystalline silicon (µc-Si:H) throughout the solar spectrum, [4][5][6][7][8][9] whereas the optoelectronic quality of the µc-Si 1−x Ge x :H films is usually not satisfactory due to the increased defect density with Ge incorporation. [10][11][12][13] It has been reported that the electronic conductivity in the dark and under illumination depends strongly on the structural composition of µc-Si 1−x Ge x :H films.…”
Section: Introductionmentioning
confidence: 99%