Transport properties of nanocrystalline silicon and silicon–germanium

Saripalli, S.; Sharma, Puneet; Reusswig, Philip D.; Dalal, Vikram L.

doi:10.1016/j.jnoncrysol.2007.10.060

Cited by 15 publications

(6 citation statements)

References 45 publications

(48 reference statements)

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“…With the range of values from Table 2, the lifetime evaluates as 1-3 µs, which is several times longer than some experimental estimates for recombination lifetimes in nc-Si:H diodes [27]. Fig.…”

Section: Hole Mobility Limit For Nanocrystalline Silicon Solar Cellsmentioning

confidence: 67%

Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon

Schiff

2009

MRS Proc.

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Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10 -3 to 1 cm 2 /Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 µm, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 µm.

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Section: Hole Mobility Limit For Nanocrystalline Silicon Solar Cellsmentioning

confidence: 67%

Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon

Schiff

2009

MRS Proc.

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“…Time-of-flight measurements found that the hole mobility in nc-Si:H was more than one hundred times larger than in a-Si:H [6,7]. Correspondingly, the hole diffusion length in nc-Si:H solar cells is much greater than 1 lm as measured by Saripalli et al [8]. The improved hole diffusion length leads to a recombination width similar to the intrinsic layer thickness.…”

Section: Resultsmentioning

confidence: 83%

Optimization and characterization of i/p buffer layer in hydrogenated nanocrystalline silicon solar cells

Yue¹,

Yan²,

Teplin

et al. 2008

Journal of Non-Crystalline Solids

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“…The stored minority carriers in the n layer of the p-n junction do not fall to zero abruptly and the current takes time to reduce to reverse saturation current which is a direct indicator of lifetime. Initial measurements of lifetime in nc-Si have been done by S. Saripalli [8].…”

Section: Measurement Techniquesmentioning

confidence: 99%

Defect Densities and Carrier Lifetimes in Oxygen doped Nanocrystalline Si

et al. 2013

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We report on the measurement of defect densities and minority carrier lifetimes in nanocrystalline Si samples contaminated with controlled amounts of oxygen. Two different measurement techniques, a capacitance-frequency (CF) and high temperature capacitancevoltage techniques were used. CF measurement is found to yield noisy defect profiles that could lead to inconclusive results. In this paper, we show an innovative technique to remove the noise and obtain clean data using wavelet transforms. This helps us discover that oxygen is creating both shallow and deep/midgap defect states in lieu with crystalline silicon. Minority carrier lifetime measured using reverse recovery techniques shows excellent inverse correlation between deep defects and minority carrier lifetimes through which hole capture cross section can be evaluated.

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Transport properties of nanocrystalline silicon and silicon–germanium

Cited by 15 publications

References 45 publications

Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon

Carrier drift-mobilities and solar cell models for amorphous and nanocrystalline silicon

Optimization and characterization of i/p buffer layer in hydrogenated nanocrystalline silicon solar cells

Defect Densities and Carrier Lifetimes in Oxygen doped Nanocrystalline Si

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