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Nanocrystalline Silicon is an important electronic materials for solar cells, for display devices and for sensors. In this paper, we discuss the influence of ions on the growth and properties of the nanocrystalline Si:H material. Using a unique growth geometry, combination of hot wire and ECR plasma growth, we show that low energy ion bombardment is beneficial for growing high quality materials. Ion bombardment by H is shown to etch the films during growth and also promote crystallinity. The results of film growth are compared with simulations of growth using the SRIM program. The electronic properties measured include mobilities of both electrons and holes in device-type structures, carrier lifetimes, diffusion lengths, defect densities and capture cross-sections for holes. Electron mobility is found to increase with grain size, with a minimum mobility being in the range of 1 cm 2 /V-s. The hole mobility is also in this range, and three different methods of measuring it give approximately the same value. The capture crosssection for holes is of the order of 1-2 x 10 -16 cm 2 . The lifetime of carriers is found to depend inversely on the defect density, implying that the recombination is trap controlled.

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