Microcrystalline silicon-germanium solar cells fabricated using VHF PECVD

Saripalli, S.; Dalal, Vikram L.

doi:10.1109/eit.2008.4554338

Cited by 1 publication

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“…Nanocrystalline Si, Ge and SiGe alloys are the promising materials for many microeectronic devices such as solar cells, thin film transistors and photodetectors [1][2][3][4]. There are extensive studies on growth chemistry and mobility of nanocrystalline Si:H films [5][6] but there is no thorough study on the grain growth and mobility of nanocrystalline Ge:H films.…”

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confidence: 99%

Grain Growth and Mobility in Nanocrystalline Ge Films

2012

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In this paper, we report on deposition and properties of nanocrystalline Ge:H films . The films were grown from germane and hydrogen mixtures using Radio frequency Plasma-enhanced chemical vapor deposition (RF-PECVD) process using ~45 MHz frequency. The crystallinity of the films was measured using Raman measurements and from x-ray diffraction techniques, it was found that the grain size was a strong function of deposition pressure, temperature and hydrogen/germane ratios. High hydrogen ratios and high powers led to films with smaller grains. Higher pressures and smaller hydrogen/germane ratio led to films with larger grain sizes, as did higher growth temperatures. The mobility of electrons and holes was measured using space charge limited current (SCLC) techniques in n + -n-n + devices. It was found that nominally undoped films were generally n type with carrier concentrations in the 1E14/cm 3 range. Mobility was found to increase with grain size, with 60 nm grains showing mobility in the 2-3 cm 2 /V-s range.

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