We present our development of n-type nano-structured hydrogenated silicon oxide (nc-SiOx:H) as a dual-function layer in multi-junction solar cells. We optimized nc-SiOx:H and attained a conductivity suitable for a doped layer and optical property suitable for an inter-reflection layer. We tested the effectiveness of the dual-function nc-SiOx:H layer by replacing the normal n layer between the middle and the bottom cells in an a-Si:H/a-SiGe:H/nc-Si:H triple-junction structure. A significant gain in the middle cell current density of ∼1.0 mA/cm2 is achieved. We further optimized the component cells and the triple-junction structures and attained an initial active-area cell efficiency of 16.3%.

Self‐assembled monolayers (SAMs) have emerged as effective carrier transport layers in perovskite (PVK) solar cells because of their unique ability to manipulate interfacial property, as well as simple processing and scalable fabrication. However, the defects and pinholes derived from their sensitive adsorption process inevitably deteriorate the final device performance. Herein, a sputtered nickel oxide (NiOx) interlayer is used as a seed layer to promote the adsorption of the [2‐(3,6‐dimethoxy‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (MeO‐2PACz) SAM on the indium tin oxide (ITO) substrate. The promoted adsorption is attributed to the enhanced tridentate binding between MeO‐2PACz and NiOx relative to the conventional bidentate binding between MeO‐2PACz and ITO. In addition, the NiOx modification can simultaneously improve the passivation ability and hole‐selectivity of the MeO‐2PACz, provide a favorable energy‐level alignment at the ITO/PVK interface, and prevent a direct contact between PVK and ITO. As a consequence, this NiOx‐seeded MeO‐2PACz hole transport layer enables a significantly enhanced power conversion efficiency of 19.9% in comparison with 18.4% of the control device. This work provides an effective strategy to improve the performance of the SAM‐based photoelectric device.

Tin oxide (SnO 2 ) is widely used in perovskite solar cells (PSCs) as an electron transport layer (ETL) material. However, its high surface trap density has already become a strong factor limiting PSC development. In this work, phosphoric acid is adopted to eliminate the SnO 2 surface dangling bonds to increase electron collection efficiency. The phosphorus mainly exists at the boundaries in the form of chained phosphate groups, bonding with which more than 47.9% of Sn dangling bonds are eliminated. The reduction of surface trap states depresses the electron transport barriers, thus the electron mobility increases about 3 times when the concentration of phosphoric acid is optimized with 7.4 atom % in the SnO 2 precursor. Furthermore, the stability of the perovskite layer deposited on the phosphate-passivated SnO 2 (P-SnO 2 ) ETL is gradually improved with an increase of the concentration. Due to the higher electron collection efficiency, the P-SnO 2 ETLs can dramatically promote the power conversion efficiency (PCE) of the PSCs. As a result, the champion PSC has a PCE of 21.02%. Therefore, it has been proved that this simple method is efficient to improve the quality of ETL for high-performance PSCs.

A fundamental theory including photoelectric response, ion migration and photon recycling effects for back-contact perovskite solar cells is established.

The structural properties of hydrogenated microcrystalline silicon solar cells are investigated using Raman, x-ray diffraction, and atomic force microscopy. The experimental results showed a significant increase of microcrystalline volume fraction and grain size with increasing film thickness. The correlation between the cell performance and the microstructure suggests that the increase of grain size and microcrystalline volume fraction with thickness is the main reason for the deterioration of cell performance as the intrinsic layer thickness increases. By varying the hydrogen dilution in the gas mixture during deposition, microstructure evolution has been controlled and cell performance significantly improved.

We have studied the effect of texture in Ag/ZnO back reflectors (BRs) on the performance of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells. While a larger texture provides superior light trapping, it also deteriorates the nc-Si:H quality. We have used total and diffused reflection and atomic force microscopy to evaluate the BR texture. A BR with textured Ag and thin ZnO layers has been found to give the best cell performance. Using the optimized BR, we have achieved an initial active-area efficiency of 10.2% in a nc-Si:H single-junction cell and a stable total-area efficiency of 12.5% in a hydrogenated amorphous silicon/nc-Si:H/nc-Si:H triple-junction cell.

We show experimentally that the photocurrent of thin-film hydrogenated microcrystalline silicon (lc-Si:H) solar cells can be enhanced by 4.5 mA/cm 2 with a plasmonic back reflector (BR). The light trapping performance is improved using plasmonic BR with broader angular scattering and lower parasitic absorption loss through tuning the size of silver nanoparticles. The lc-Si:H solar cells deposited on the improved plasmonic BR demonstrate a high photocurrent of 26.3 mA/cm 2 which is comparable to the state-of-the-art textured Ag/ZnO BR. The commonly observed deterioration of fill factor is avoided by using lc-SiO x :H as the n-layer for solar cells deposited on plasmonic BR. V C 2013 AIP Publishing LLC [http://dx

Wide bandgap (E g ) mixed-halide perovskite has attracted much attention for applications in photovoltaic devices. However, devices featuring this type of perovskite are often subject to a large voltage deficit due to the occurrence of phase segregation, which limits the relevant devices' access to high performances. Here, the correlation of the phase segregation and voltage losses for wide-E g mixed-halide perovskite solar cells (PSCs) is clarified by experiments and simulations. Taking 1.67 eV E g mixed-halide perovskite as an example, it is confirmed experimentally that the control devices produce a poor physical morphology, a locally widened E g , and an inferior electrical response. By suppressing the phase segregation, the open-circuit voltage (V oc ) can be boosted from 1.15 to 1.20 V, which is a high value for the 1.67 eV E g mixed-halide PSCs. An electrical simulation of phase segregation reveals that the performance degeneration can be attributed to the bulk recombination due to the energy level mismatch of the varied E g s. Moreover, a theoretical perspective is produced to expatiate on the strategies for the high V oc of wide-E g PSCs. This study brings deep guidance to unlock the potential for high-performance mix-halide PSCs.