Sputtered NiO
x
(sp-NiO
x
) is
a preferred hole transporting material for perovskite
solar cells because of its hole mobility, ease of manufacturability,
good stability, and suitable Fermi level for hole extraction. However,
uncontrolled defects in sp-NiO
x
can limit
the efficiency of solar cells fabricated with this hole transporting
layer. An interfacial layer has been proposed to modify the sp-NiO
x
/perovskite interface, which can contribute
to improving the crystallinity of the perovskite film. Herein, a 2-(3,6-dimethoxy-9
H
-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled
monolayer was used to modify an sp-NiO
x
surface. We found that the MeO-2PACz interlayer improves the quality
of the perovskite film due to an enlarged domain size, reduced charge
recombination at the sp-NiO
x
/perovskite
interface, and passivation of the defects in sp-NiO
x
surfaces. In addition, the band tail states are also reduced,
as indicated by photothermal deflection spectroscopy, which thus indicates
a reduction in defect levels. The overall outcome is an improvement
in the device efficiency from 11.9% to 17.2% due to the modified sp-NiO
x
/perovskite interface, with an active area
of 1 cm
2
(certified efficiency of 16.25%). On the basis
of these results, the interfacial engineering of the electronic properties
of sp-NiO
x
/MeO-2PACz/perovskite is discussed
in relation to the improved device performance.