Metalorganic Vapor-Phase Epitaxy Growth Parameters 
for Two-Dimensional MoS2

Marx, M; Grundmann, Annika; Lin, Yu‐Chuan; Andrzejewski, Dominik; Kümmell, T.; Bacher, G.; Heuken, M.; Kalisch, H.; Vescan, A.

doi:10.1007/s11664-017-5937-3

Cited by 27 publications

(32 citation statements)

References 20 publications

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“…by gas source CVD, there has been renewed interest in its use for the synthesis of monolayer and few-layer chalcogenide films such as MoS2 [75][76][77] and WSe2. [78][79][80][81] A variety of precursors have been employed for the growth of 2D materials including metal carbonyls (W(CO)6 75,80 and Mo(CO)6 [75][76][77] ), halides (MoCl5, 66 WCl6, 65,78 NbCl5 68 ), metalorganics ((CH3)3Bi, 62,82,83 ), organo-chalcogen compounds ((CH3)2Se, 80 , (C2H5)2Se, 65,78,82,84 (C4H9)2Se, 66,68 (C2H5)2S, 75 (C4H9)2S, 77 (C2H5)2Te, 83,85 (C3H7)2Te 62 ), and hydrides (H2S, 76 H2Se 80 ). Except for the hydrides which are supplied as gases, the precursors are typically liquids or solids at room temperature with low to moderate vapor pressure.…”

Section: Milestonesmentioning

confidence: 99%

A roadmap for electronic grade 2D materials

et al. 2019

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Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano-and atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping. 1-8 2D semiconductors such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go "beyond the bench", advances in large-scale, 2D layer synthesis and engineering must lead to "exfoliation-quality" 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications. The document is organized as follows:

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Section: Milestonesmentioning

confidence: 99%

A roadmap for electronic grade 2D materials

et al. 2019

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“…The MoS2 films were grown by metal-organic vapor phase deposition (MOCVD) [38,39] on 2inch sapphire wafers. Multilayer material (M) was deposited using di-tert-butyl-sulfide (DTBT)…”

Section: Mos2 Fet Fabrication and Characterizationmentioning

confidence: 99%

“…as the sulfur precursor [38] , while H2S was selected for the monolayer material (S) deposition [39] .…”

Section: Mos2 Fet Fabrication and Characterizationmentioning

confidence: 99%

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

et al. 2022

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We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS2 field effect transistors (FETs). The MoS2 FETs are fabricated using a wafer-scale process on 8 µm thick Polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS2 sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS2, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.

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“…AlN [152][153][154], InP [80,155], Si [156][157][158][159][160][161][162], and (Ca,Ba)F 2 [131,[163][164][165][166]. Other growth techniques, however, are generally less exploratory and mainly research the quasi-vdW heteroepitaxy of vdW materials on sapphire (MOVPE [96,[167][168][169][170][171][172], CVD [173][174][175][176][177][178][179][180] and ALD [181][182][183]). In-plane epitaxial alignment is often achieved after proper substrate preparation [138,139,141,142,146,150,[156][157][158][159]175].…”

Section: Epitaxial Alignmentmentioning

confidence: 99%

Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions

Mortelmans,

De Gendt,

Heyns

et al. 2020

Preprint

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The application of new materials in nanotechnology opens new perspectives and enables groundbreaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry. However, the integration of van der Waals materials relying on industry-compatible manufacturing processes is still a major challenge. This is currently restricting the application of these new materials to the research laboratories environment only. The large-area and single-crystalline growth of van der Waals materials is one of the most important requirements to meet the challenging demands implied by the semiconductor industry. This review contributes to a more generalized understanding on the integration of van der Waals materials -and in more specific 2D chalcogenides -through the growth process of epitaxy. This, can pursue further the aspiration of large-area, single-crystalline and defect-free epitaxial integration of (quasi) van der Waals homo-and heterostructures into the great world of the semiconductor industry.

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Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Cited by 27 publications

References 20 publications

A roadmap for electronic grade 2D materials

A roadmap for electronic grade 2D materials

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions

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Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Cited by 27 publications

References 20 publications

A roadmap for electronic grade 2D materials

A roadmap for electronic grade 2D materials

Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions

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Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates