Metal-organic molecular beam epitaxy (MOMBE) and laser-modified MOMBE of III-V semiconductors

A kinetic model for tris(dimethylamino) arsine decomposition on GaAs(100) surfaces

“…The reactions chosen by us to describe TDMAAs decomposition on the GaAs(100) surface are listed as reactions (1) to (9) in Table I.…”

“…The effect of this assumption on the kinetic parameters we establish for this model will be discussed with consideration of the uncertainties in experimental data based on which we derive the parameters. The rate constant of each of reactions (2) to (9) is modeled by the Arrhenius expression, Aexp(-E/RT), with A being the pre-exponential factor and E the activation energy for the reaction. We used the method of fitting to determine the kinetic parameters in Table I.…”

“…In addition, carbon was reduced more than two orders of magnitude in GaAs films grown with TMGa and TDMAAs as compared to TMGa and AsH 3 . TDMAAs has also been utilized in atomic layer epitaxy (ALE) of GaAs and AlAs, 4-6 Dong et al [7][8][9][10] achieved better electrical properties of GaAs grown using TEGa and TDMAAs than those of GaAs samples reported by other groups. Their laser-assisted growth of GaAs with TEGa and TDMAAs showed a wider range of growth enhancement at lower substrate temperatures.…”

Chemical Beam Epitaxy of InP with Ar + Laser Irradiation

“…Several studies of Ar ϩ laser-assisted chemical beam epitaxy (CBE) of GaAs have been reported. [1][2][3] Those studies revealed that the laser irradiation enhanced the growth rate by decomposing triethylgallium (TEGa) molecules, especially at low temperatures where the thermal decomposition rate was slower. It was concluded in those studies that the mechanism responsible for the growth rate enhancement was of a photolytic and/or pyrolytic nature.…”

“…Catalytic (or electrochemical) mechanisms were ruled out because dependence of the growth rate enhancement on the substrate type (n-type, p-type, or semi-insulating) was not observed. Growth enhancement resulting from substrate temperature rise (ϳ25ЊC) due to laser irradiation could account for the extent of growth rate enhancement in the case of the group V species being As 4 from an effusion cell of solid arsenic, 2 but not in the case of group V species being tris(dimethylamino) arsine 3 or thermally cracked arsine. 1 Additional studies therefore seem necessary to obtain a qualitative, or even quantitative, description of Ar ϩ laser-induced physical and chemical growth processes in a CBE setup.…”