An evaluation of alternative precursors in chemical beam epitaxy: tris-dimethylaminoarsenic, tris-dimethylaminophosphorus, and tertiarybutylphosphine

Phys. Status Solidi (c)

et al. 2006

The effect of substrate temperature upon the photoluminescence (PL) properties of phosphorus-doped ZnTe layers grown by atmospheric pressure metalorganic vapor phase epitaxy using trisdimethylaminophosphorus as a dopant source has been investigated together with the growth rate behaviour. At a substrate temperature of 400 °C corresponding to the growth condition close to the mass transport to surface kinetic transition region, the PL spectrum at 4 K is characterized by a strong I a and a weak free-to-bound transition emission, implying a P-doped ZnTe layer of good crystalline quality. For the layers grown at the substrate temperatures away from this temperature, on the other hand, a donor-acceptor pair recombination emission appears in the spectra. The P-doped layers exhibit only the edge emission at 549nm in the room temperature PL specrum, independent of substrate temperature. The relationship between the electrical properties of P-doped layers and the substrate temperature has also clarified.

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Section: Introductionmentioning

confidence: 89%

Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris‐dimethylaminophosphorus

Phys. Status Solidi (c)

et al. 2006

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“…Tris-dimethylaminophosphorus, P[N(CH3)2]3, (TDMAP) may be expected as a new dopant source of P, since there is no P-H bond in TDMAP. Also, this material has lower toxicity than tertiary-butylphosphine and a relatively low decomposition temperature, as can be seen from the investigations on precursor source for GaP or InP growth [7,8].…”

Section: Introductionmentioning

confidence: 91%

Growth of phosphorus‐doped ZnTe layers by metalorganicvapour phase epitaxy using tris‐dimethylaminophosphorus

et al. 2004

phys. stat. sol. (c)

PACS 73.61. Ga, 78.55.Et, 81.15.Gh P-type doping of ZnTe has been investigated by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus as a dopant source. The photoluminescence and electrical properties of the layers have been clarified as a function of the dopant transport rate. For the layer grown at low dopant transport rate, e.g., 0.01 µmol/min, the spectrum is characterized by a free-to-bound transition emission related to phosphorus acceptor, although the spectrum is characterized by the donor-acceptor pair recombination emission for a relatively high dopant transport rate, e.g., 0.8 µmol/min. The carrier concentration of approximately 8 × 10 17 cm -3 is obtainable by using this dopant source.

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“…TDMAP has been so far used in the investigations on precursor sources for GaP or InP growth [5,6]. TDMAP may have lower toxicity than TBP, since it has no P-H bonds [5,6]. In the previous study [4], we found that the photoluminescence (PL) spectrum of ZnTe layer is drastically improved at a substrate temperature of 400 1C corresponding to the mass transport to surface kinetic transition region when the substrate temperature was varied from 340 to 500 1C.…”

Section: Introductionmentioning

confidence: 93%

“…On the other hand, we have successfully grown P-doped ZnTe by using tris-dimethylaminophosphorus (TDMAP), P [N(CH 3 ) 2 ] 3 , as a dopant source of P [3,4]. TDMAP has been so far used in the investigations on precursor sources for GaP or InP growth [5,6]. TDMAP may have lower toxicity than TBP, since it has no P-H bonds [5,6].…”

Section: Introductionmentioning

confidence: 98%

Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorus

Journal of Crystal Growth

et al. 2007