Growth of phosphorus‐doped ZnTe layers by metalorganicvapour phase epitaxy using tris‐dimethylaminophosphorus

Abstract

PACS 73.61. Ga, 78.55.Et, 81.15.Gh P-type doping of ZnTe has been investigated by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus as a dopant source. The photoluminescence and electrical properties of the layers have been clarified as a function of the dopant transport rate. For the layer grown at low dopant transport rate, e.g., 0.01 µmol/min, the spectrum is characterized by a free-to-bound transition emission related to phosphorus acceptor, although the spectrum is characterized by the donor-acceptor pair recombination emission for a relatively high dopant transport rate, e.g., 0.8 µmol/min. The carrier concentration of approximately 8 × 10 17 cm -3 is obtainable by using this dopant source.

Post‐annealing effect upon phosphorus‐doped ZnTe homoepitaxial layers grown by MOVPE

“…Figure 4 shows PL spectra at 4 K of (a) A-layers and (b) N-layers for various TDMAP transport rates of up to 2 µmol/min. It is seen that TDMAP transport rate influences PL spectrum at 4 K of the A-layer considerably in agreement with the previous studies [3,5]. For the A-layers grown at low TDMAP transport rates of 0.1 and 0.2 µmol/min, the PL spectra are marked by a strong I a at 2.375 eV and relatively weak FB and DAP together with a weak FE at 2.382 eV, indicating the P-doped ZnTe layer of high crystalline quality.…”

“…PL spectrum of the A-layer ( Fig. 2(a)) is dominated by strong DAP, which will be the typical feature observed for the P-doped ZnTe layer grown at relatively high TDMAP transport rate [3,5]. Considerably weak P acceptor-related excitonic emission (I a ) and free exciton emission (FE) are observed at 2.375 and 2.382 eV, respectively.…”

“…As for metalorganic vapour phase epitaxy (MOVPE), which is a promising growth technique for mass production, P-doped ZnTe layer with a free hole concentration of 3.5 × 10 17 cm -3 has been achieved by using tertiary-butylphosphine (TBP) as a dopant source [2]. In our previous studies, we have successfully grown P-doped ZnTe homoepitaxial layers by MOVPE using trisdimethylaminophosphorus (TDMAP) as a novel P source [3][4][5]. Although the layers with a relatively high carrier concentration of 2.0 × 10 17 to 1.3 × 10 18 cm -3 have been obtainable by using this precursor, these show only donor-acceptor pair emission (DAP) in the photoluminescence (PL) spectrum at 4 K [5], implying that the crystalline quality deteriorates and some compensation is inevitable.…”

Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris‐dimethylaminophosphorus

“…The P-doped ZnTe layers were grown by atmospheric pressure MOVPE in almost the same manner as was employed in the previous study [2]. Briefly, dimethylzinc and diethyltelluride were used as source materials while TDMAP as a dopant source.…”

“…With respect to a phosphorus (P) doping, p-type ZnTe layer with a relatively high concentration of around 3.5×10 17 cm -3 has been achieved by using tertiary-butylphosphine (TBP) with high toxic [1]. On the other hand, we have grown P-doped ZnTe with a carrier concentration as high as 8×10 17 cm -3 by using tris-dimethylaminophosphorus, P[N(CH 3 ) 2 ] 3 , (TDMAP) as a new dopant source of P [2]. TDMAP has no P-H bonds, resulting in lower toxicity than TBP, and shows a relatively low decomposition temperature as reported in the investigations on precursor sources for GaP or InP growth [3,4].…”