Post‐annealing effect upon phosphorus‐doped ZnTe homoepitaxial layers grown by MOVPE

Abstract

The effect of post-annealing treatment upon the photoluminescence (PL) spectra of phosphorus-doped ZnTe homoepitaxial layers grown by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus (TDMAP) has been investigated. PL properties at 4 K of the layers are dramatically improved by the post-annealing in nitrogen flow, i.e. donor -acceptor pair emission vanishes and instead free-to-bound transition emission (FB) and broadened acceptor-related excitonic emission (I a ) appear. PL intensity at room temperature is enhanced remarkably by the treatment. While the post-annealing treatment in hydrogen flow also gives an increase in PL intensity at room temperature of the layer, PL spectrum at 4 K is almost unchanged. The intensity ratio of FB to broadened I a for the layer after post-annealing treatment in nitrogen flow increases and the broadened I a shifts towards longer wavelength side with increasing TDMAP transport rate.

Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−Mg Se Te1− layers grown at various substrate temperatures or dopant transport rates by MOVPE

“…On the other hand, photoluminescence spectrum of Zn 1 À x Mg x Se y Te 1 À y layer grown at a TDMAP transport rate of 0.37 μmol/min exhibits deep level emission in the red spectrum region (around 1.8 eV), which may be due to formation of complexes related to defects accompanied with P incorporation. As a result, it was difficult to confirm p-type conduction owing to high resistivity, considerably different from P doping of ZnTe [13] and Zn 1 À x Mg x Te [14] by MOVPE. Fig.…”

Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method

“…1. Before the temperature-dependent measurements, we have characterized the contact quality of electroless Pd against P-doped Zn 1 À x Mg x Te by measuring current (I)-voltage (V) curves at RT and 80 K. Because an annealing treatment considerably alters the electrical properties not only for P-doped ZnTe [13,14] but also for P-doped Zn 1 À x Mg x Te [15], the heat treatment of contact was avoided. Typical I-V characteristics obtained at RT and 80 K between two contacts on P-doped Zn 0.89 Mg 0.11 Te are shown in Fig.…”

Growth of phosphorus-doped ZnTe thin films by molecular beam epitaxy using InP as the dopant source

“…29,31) Finally, a post-annealing treatment was applied to the sample at 300 °C for 1 h under N gas flow since it has been reported to improve the crystal quality and optical properties of the P-doped ZnTe thin films. 29,34,35) As seen in Fig. 5(b), after annealing at 300 °C, the I a emission intensity became stronger, suggesting the activation of P acceptors, although SK1031-3 © 2023 The Japan Society of Applied Physics the deep-level emission at 1.7-1.9 eV also became stronger.…”