2015
DOI: 10.1108/mi-12-2014-0055
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MEMS SPDT microswitch with low actuation voltage for RF applications

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Cited by 8 publications
(4 citation statements)
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“…Khater et al [7] demonstrated 60% voltage reduction by changing the actuation mode from static to dynamic pull-in. Samaali and Najar [24] demonstrated an important reduction of the ON state voltage of a doubly-clamped microswitch, as low as 4.5 V, when using a square waveform compared to a harmonic signal. Similarly, Naoui et al [25] demonstrated similar reductions in switching time and pull-in voltage of MEMS switches using unipolar and bipolar square waveforms compared with harmonic signal.…”
Section: Journal Of Micromechanics and Microengineeringmentioning
confidence: 99%
“…Khater et al [7] demonstrated 60% voltage reduction by changing the actuation mode from static to dynamic pull-in. Samaali and Najar [24] demonstrated an important reduction of the ON state voltage of a doubly-clamped microswitch, as low as 4.5 V, when using a square waveform compared to a harmonic signal. Similarly, Naoui et al [25] demonstrated similar reductions in switching time and pull-in voltage of MEMS switches using unipolar and bipolar square waveforms compared with harmonic signal.…”
Section: Journal Of Micromechanics and Microengineeringmentioning
confidence: 99%
“…Widespread applications of Microelectromechanical systems (MEMS) as sensors (Amiri and Kordrostami, 2018;Hwang et al, 2019;Kumar et al, 2018;Rafiee et al, 2016), switches (Samaali et al, 2015;Kim et al, 2018) and energy harvesters (Kordrostami and Roohizadegan, 2019;Kordrostami and Roohizadegan, 2018;Ghoddus et al, 2019;Ghoddus and Kordrostami, 2018) have revolutionized the technology in terms of the size of the devices (particularly the sensors) and high integration capability with electric circuits (Rafiee et al, 2017;Amiri et al, 2020). Micromachined pressure sensor is the most commonly used MEMS sensors.…”
Section: Introductionmentioning
confidence: 99%
“…Seyedi et al (2015) proposed content addressable memory component using NEM switches and CMOS transistors to realize the translation lookaside buffers with 16 nm technology works at 2 GHz for accessing data and instructions to complete the search operation within one clock cycle. Samaali et al (2015) reported mathematical modeling and finite element method solution for electrostatic-based single pole double throw switch (SPDT) micro switch used in a wireless sensor. The logic gates reported in literature works in the range of 0V to 40V, involves more NEMS switches with complex structures too.…”
Section: Introductionmentioning
confidence: 99%