Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice

Abstract

Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities Appl. Phys. Lett. 101, 132105 (2012) Effects of Co content on the structural, luminescence, and ferromagnetic properties of Zn1−xCoxSy films J. Appl. Phys. 112, 063712 (2012) Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire J. Appl. Phys. 112, 063112 (2012) Observation of In-related collective spontaneous emission (superfluorescence) in Cd0.8Zn0.2Te:In crystal Appl. Phys. Lett. 101, 091115 (2012) Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: Experiment and theory Temperature (11-250 K) and excitation power (5-480 mW) dependent infrared photoluminescence (PL) measurements are conducted on a HgTe=Hg 0:05 Cd 0:95 Te superlattice (SL) sample in a spectral range of 5-18 lm with adequate spectral resolution and signal-to-noise ratio. Three PL components are identified from the evolution of the PL lineshape with temperature although the full-width at half-maximum (FWHM) of the whole PL signal is only about 7 meV at 11 K, for which different changes of the energy, FWHM, and integral intensity are evidenced. The mechanisms are clarified that the medium-energy component is due to electron-heavy hole intersubband transition, while the low-energy (LE) component correlates to localized states and the high-energy (HE) one may originate in interfacial inhomogeneous chemical intermixing and Brillouin-zone boundary effects. The LE and HE component-related effects are responsible for the PL quality of the SL at the temperatures well below and above 77 K, respectively. V C 2012 American Institute of Physics. [http://dx.

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

“…For some narrow gap dilute bismides like InAsBi and InSbBi, the available PL is located in mid-IR region, which is overwhelmed by the strong environment black-body emission. Modulation PL technique based on the step-scan Fourier transform infrared (FTIR) spectrometer is therefore employed [228,229]. In addition, photoreflectance (PR) spectroscopy is a distinctive method for optical properties and electronic structure of dilute bismides.…”

Annealing effects on Cd0.96Zn0.04Te crystals with Te inclusions probed by photoluminescence spectroscopy

“…Figure 3 comparable due to different crystal growth conditions, the comparison of the intensities between the samples from the same crystal before and after annealing is feasible, and the relative intensity of each peak may provide meaningful insight into the mechanism of the related PL transition [25]. The D 0 2 X PL intensity gets enhanced as marked by the arrows in Fig.…”

Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence

“…The s-shape behavior is clearly observed: The energy slightly red-shifts with rising temperature below 20 K, then turns around to peak at 90 K, and normal red-shift follows above 90 K. Obviously, the HE feature dominates the energy and γ at low temperatures and manifests nearly identical evolution as the whole PL peak. This indicates unambiguously that here a single PL process represented by feature HE at low temperatures contributes to the s-shape behavior, in clear contrast to the well studied s-shape evolution generally induced by the competition of two or more PL processes energetically close to each other as temperature rises [29].…”

“…As the PL profile is asymmetric at low temperatures and also evolves with temperature, curve-fitting procedure should be beneficial for clarifying the non-monotonous behavior as well as the origin of the PL process [29]. In Fig.…”

“…In Fig. 1(b), typical curve-fittings of PL spectra, with mixed Gaussian-Lorentzian functions [29], are depicted for the temperatures of 11.5, 40 and 80 K, respectively. The results show that (i) at temperatures below 40 K, the PL spectrum can be well reproduced by a two-feature assumption, of which one feature contributes to the spectrum dominantly with peak energy nearly coincident to the peak of the PL spectrum and the other acts weakly on the low-energy side of the spectrum, as marked by HE and LE in Fig.…”