Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence

Zhu, Liang; Song, Yuxin; Qi, Zhen; Wang, Shumin; Zhu, Liangqing; Chen, Xiren; Zha, F. X.; Guo, Shaohui; Shao, Jianda

doi:10.1016/j.jlumin.2015.08.075

Cited by 2 publications

(1 citation statement)

References 49 publications

(58 reference statements)

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“…Auger process involve three carriers, and the rate of Auger recombination is lower than multiphonon emission at higher temperature. However, Auger processes will compete more effectively with multiphonon processes at low temperatures, as the multiphonon contribution becomes small at low temperatures [41,42]. So the Auger recombination is the main reason for the non-radiative recombination at low temperature.…”

Section: Resultsmentioning

confidence: 99%

Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy

Liu

Wang

Zhu

et al. 2018

Semicond. Sci. Technol.

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This paper reports the dislocation-related photoluminescence (PL) in GeSn films. The GeSn film samples with Sn content of 1%-7.4% were grown on Ge (001) substrates by molecular beam epitaxy at low temperatures. Dislocations at the interface between the GeSn and the Ge buffer layer as well as the threading dislocations throughout the GeSn layer were observed for the annealed samples, but not for the as-grown samples. PL peaks of the annealed GeSn film samples show a significant red shift with increasing Sn content. However, a large energy difference (122 meV) between the PL peak energy and theoretically calculated indirect bandgap energy was found for all the GeSn films with different Sn contents. Furthermore, the PL peak position as a function of temperature could be well fitted by the calculated E g -T line, indicating that the PL observed in the GeSn films is dislocation-related PL.

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Section: Resultsmentioning

confidence: 99%

Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy

Liu

Wang

Zhu

et al. 2018

Semicond. Sci. Technol.

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Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

Shi,

Wang,

et al. 2024

Applied Physics Letters

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High-quality III–V quantum structures, advanced epitaxial technologies, and characterization methods are essential to drive the development of infrared optoelectronic materials and devices. As an important component of type II superlattices, InAs/InxGa1−xAsySb1−y would play an important role in the field of high-performance infrared detectors due to their excellent luminescence efficiency and high crystal quality. However, their interfacial characteristics and the associated minority carrier lifetime are still difficult to identify. In this paper, an atomic imaging technique was used to identify the arrangement and distribution of elements of the InAs/In0.5Ga0.5As0.5Sb0.5 superlattice. Our results confirm the epitaxy mechanism that the quaternary alloy consists of two kinds of ternary alloy in one monolayer. Moreover, by separating the cation and anion columns in the elementally resolved atomic images of the InAs/In0.5Ga0.5As0.5Sb0.5 superlattice, we demonstrate that the interfacial atomic intermixing is less than one molecular layer thickness. Therefore, benefiting from excellent interface quality, InAs/In0.5Ga0.5As0.5Sb0.5 superlattice exhibited high radiation recombination efficiency in the long-wave infrared band (∼8.5 μm), and longer minority carrier lifetime (∼810 ns at 90 K).

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Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence

Cited by 2 publications

References 49 publications

Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy

Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

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