Mechanisms of damage formation in semiconductors

Damage formation in SiC ion implanted at 625K

“…3 it can be seen that in general the same evolution of damage is found independent whether self-ions or Ag ions are implanted. The damage formation proceeds in two steps which was found to be typical for implantation in semiconductors at temperatures around or above the critical temperature [7,8]. The maximum damage concentration increases at similarly low numbers of displacements per lattice atom, n dpa , for both series of implantation.…”

Temperature dependence of damage formation in Ag ion irradiated 4H-SiC

“…(1), see Ref. [10]. The second equation, describing the evolution of the fraction of amorphous material, n a , with the cross-section of direct impact amorphisation, P a , and the cross-section of stimulated growth of amorphous material G a n a , is equivalent to the model of direct impact/defect stimulated amorphisation used by Weber and co-workers to successfully represent the damage evolution in SiC at higher ion fluences (see e.g.…”

Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

“…As a result, long range crystalline order was lost in the quaternary layer. For heavy ions, the nuclear stopping process and the recoil collision cascade produces atom displacements that are clustered in heavily damaged pockets [14]. Multiple-energy implantation distributes them across the quaternary layer.…”