Temperature dependence of damage formation in Ag ion irradiated 4H-SiC

Wendler, E.; Bierschenk, Thomas; Wesch, W.; Friedland, E.; Malherbe, J.B.

doi:10.1016/j.nimb.2010.05.026

Cited by 22 publications

(14 citation statements)

References 19 publications

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“…At an ion fluence of N I = 1.4 Â 10 16 cm À2 a significant damage peak occurs which increases in height and broadens slightly during further implantation without reaching the random level for the highest ion fluence applied of 2.6 Â 10 16 cm À2 . Similar spectra were measured also on Ag ion implanted SiC (not shown, see [7]). The damage profiles n da (z) calculated from the spectra in Fig.…”

Section: Experimental Methodssupporting

confidence: 76%

“…3 it can be seen that in general the same evolution of damage is found independent whether self-ions or Ag ions are implanted. The damage formation proceeds in two steps which was found to be typical for implantation in semiconductors at temperatures around or above the critical temperature [7,8]. The maximum damage concentration increases at similarly low numbers of displacements per lattice atom, n dpa , for both series of implantation.…”

Section: Resultsmentioning

confidence: 87%

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Damage formation in SiC ion implanted at 625K

Wendler

Schöppe

Bierschenk

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Experimental Methodssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 87%

Damage formation in SiC ion implanted at 625K

Wendler

Schöppe

Bierschenk

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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“…At the higher implantation temperature, the displaced substrate atoms have more energy to move around to recombine with vacancies. An analysis of the RBS data show that the damage is a mixture of point defect clusters and extended defects most probably dislocations [115]. This was confirmed by TEM [133].…”

Section: Amorphizationmentioning

confidence: 53%

Diffusion of fission products and radiation damage in SiC

Malherbe

2013

J. Phys. D: Appl. Phys.

106

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A major problem with most of the present nuclear reactors is their safety in terms of the release of radioactivity into the environment during accidents. In some of the future nuclear reactor designs, i.e. Generation IV reactors, the fuel is in the form of coated spherical particles, i.e. TRISO (acronym for Triple Coated Isotropic) particles. The main function of these coating layers is to act as diffusion barriers for radioactive fission products, thereby keeping these fission products within the fuel particles, even under accident conditions. The most important coating layer is composed of polycrystalline 3C-SiC. This paper reviews the diffusion of the important fission products (silver, caesium, iodine and strontium) in SiC. Because radiation damage can induce and enhance diffusion, the paper also briefly reviews damage created by energetic neutrons and ions at elevated temperatures, i.e. the temperatures at which the modern reactors will operate, and the annealing of the damage. The interaction between SiC and some fission products (such as Pd and I) is also briefly discussed. As shown, one of the key advantages of SiC is its radiation hardness at elevated temperatures, i.e. SiC is not amorphized by neutron or bombardment at substrate temperatures above 350°C. Based on the diffusion coefficients of the fission products considered, the review shows that at the normal operating temperatures of these new reactors (i.e. less than 950°C) the SiC coating layer is a good diffusion barrier for these fission products. However, at higher temperatures the design of the coated particles needs to be adapted, possibly by adding a thin layer of ZrC.

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“…Change in the irradiation temperature may affect the damage creation and recovery rates, as readily demonstrated in strontium titanate (STO), 32 silicon carbide (SiC), 33,34 and some pyrochlores. 35 These materials exhibit very low damage level when irradiated above a threshold temperature whereas they otherwise undergo amorphization.…”

Section: Discussionmentioning

confidence: 99%

Comprehensive study of the effect of the irradiation temperature on the behavior of cubic zirconia

Debelle

Channagiri

Thomé

et al. 2014

Journal of Applied Physics

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High-temperature stability of ion-implanted zirconia and spinel J. Appl. Phys. 97, 113509 (2005) ) and at five temperatures: 80, 300, 573, 773, and 1073 K. Irradiated samples have been characterized by Rutherford backscattering spectroscopy in channeling mode, X-ray diffraction and transmission electron microscopy techniques in order to determine the disordering kinetics. All experimental results show that, whatever is the irradiation temperature, the damage build-up follows a multi-step process. In addition, the disorder level at high fluence is very similar for all temperatures. Thus, no enhanced dynamic annealing process is observed. On the other hand, transitions in the damage accumulation process occur earlier in fluence with increasing temperature. It is shown that temperature as low as 573 K is sufficient to accelerate the disordering process in ion-irradiated YSZ. V C 2014 AIP Publishing LLC. [http://dx

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Temperature dependence of damage formation in Ag ion irradiated 4H-SiC

Cited by 22 publications

References 19 publications

Damage formation in SiC ion implanted at 625K

Damage formation in SiC ion implanted at 625K

Diffusion of fission products and radiation damage in SiC

Comprehensive study of the effect of the irradiation temperature on the behavior of cubic zirconia

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