Measuring the frequency response of optically pumped metal-clad nanolasers

Abstract

We report on our initial attempt to characterize the intrinsic frequency response of metal-clad nanolasers. The probed nanolaser is optically biased and modulated, allowing the emitted signal to be detected using a high-speed photodiode at each modulation frequency. Based on this technique, the prospect of high-speed operation of nanolasers is evaluated by measuring the -factor, which is the ratio of the resonance frequency to the square root of its output power ( / / ). Our measurements show that for nanolasers, this factor is an order of magnitude greater than that of other state-of-the-art directly modulated semiconductor lasers. The theoretical analysis, based on the rate equation model and finite element method simulations of the cavity is in full agreement with the measurement results.

Single-Mode Emission in InP Microdisks on Si Using Au Antenna

“…Small mode volumes and low thresholds can be achieved by various cavity types, like photonic crystal cavities, − metal-clad cavities, − semiconductor-on-metal cavities, , or whispering gallery mode (WGM) microdisk cavities, − based on total internal reflection. The latter have the advantage of possessing a simple fabrication scheme.…”

Review: III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

“…The most advanced devices have been demonstrated on bonded substrates [129,130], by micro-transfer printing [131] or fabricated by the selective under etching of a disk etched in a III-V based stack grown by molecular beam epitaxy [37,43,132]. A study comparing optically pumped TASE grown devices with bonded ones shows similar device thresholds and improved characteristic temperature of 190 K for the monolithically integrated cavity compared to the bonded one, which is 90 K [115].…”

Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

“…Moreover, electrically operated nanoscale devices may have metals in the proximity of the gain medium for electrical actuation, irrespective of their capability to support a plasmonic mode. While one would expect increased absorption losses, there are also many benefits connected to the metal, spanning from Purcell enhancement, faster modulation responses [89], increased confinement to improved heat sinking [90]- [92], enabling III-V nanolasers on Si [93]- [96].…”