Review: III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

Tiwari, Preksha; Triviño, Noelia Vico; Schmid, Heinz; Moselund, Kirsten E.

doi:10.1088/1361-6641/ac9f60

Cited by 7 publications

(5 citation statements)

References 184 publications

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“…This provides a guideline for possible integration of the etching recipe for different applications with proven capability of the approach for the delivery of a specific combination of NW size and trench depth. The recipe can be modified further for extreme trench depth applications [9], as well as facilitate the integration of MEMS and NEMS devices into multiscale architectures [49,50].…”

Section: Resultsmentioning

confidence: 99%

Simplified top-down fabrication of sub-micron silicon nanowires

Zare Pakzad,

Akinci,

Karimzadehkhouei

et al. 2023

Semicond. Sci. Technol.

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Silicon nanowires are among the most promising nanotechnology building blocks in innovative devices with numerous applications as nanoelectromechanical systems. Downscaling the physical size of these devices and optimization of material functionalities by engineering their structure are two promising strategies for further enhancement of their performance for integrated circuits and future-generation sensors and actuators. Integration of silicon nanowires as transduction elements for inertial sensor applications is one prominent example for an intelligent combination of such building blocks for multiple functionalities within a single sensor. Currently, the efforts in this field are marred by the lack of batch fabrication techniques compatible with semiconductor manufacturing. Development of new fabrication techniques for such one-dimensional structures will eliminate the drawbacks associated with assembly issues. The current study aims to explore the limits of batch fabrication for a single nanowire within a thick Si layer. The objective of the current work goes beyond the state of the art with significant improvements to the recent viable approach on the monolithic fabrication of nanowires, which was based on a conformal side-wall coating for the protection of the nanoscale silicon line followed by deep etch of the substrate transforming the protected layer into a silicon nanowire. The newly developed fabrication approach eliminates side wall protection and thereby reduces both process complexity and process temperature. The technique yields promising results with possible improvements for future micro and nanofabrication processes.

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Section: Resultsmentioning

confidence: 99%

Simplified top-down fabrication of sub-micron silicon nanowires

Zare Pakzad,

Akinci,

Karimzadehkhouei

et al. 2023

Semicond. Sci. Technol.

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“…The III-V seed is subsequently guided by a hollow SiO 2 template which provides a great control over the shape and dimension of the resultant III-V crystals. Direct growth of vertical, horizontal and stacked nanowires and nanowire heterojunctions have been achieved [90]. Cointegration of diverse III-V materials also becomes possible by tailoring template design [91].…”

Section: Bufferless Iii-v Growth On Si For Optically Pumped Lasersmentioning

confidence: 99%

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Yan,

2024

J. Phys. D: Appl. Phys.

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Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first discuss III–V lasers that are highly tolerant to dislocations, including quantum dot/dash diode lasers, interband cascade, and quantum cascade lasers grown on Si from near infrared to long-wave infrared. We then move to the selective heteroepitaxy of low dislocation density III–Vs for the bufferless lasers. Finally, we review the III–V nanowire photonic crystal lasers grown on Si, which offers a different approach to overcome material mismatch and grow dislocation free III–V structures on silicon. We start with briefly introducing the recent progress of each technology, followed with a discussion of its key advantages, research challenge and opportunities.

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“…Template assisted selective epitaxy (TASE) allows high defect control when growing III-V nano- and microstructures monolithically on silicon 14 , 15 . Analysis of the evolution of the growth front in TASE-grown heterostructured III-V nanowires is fundamental to ensure homogeneous heterolayer thickness 16 and composition, in the case of ternary III-V compounds 17 .…”

Section: Introductionmentioning

confidence: 99%

Machine Learning Inspired Nanowire Classification Method based on Nanowire Array Scanning Electron Microscope Images

Brugnolotto,

Aleksandrov,

Sousa

et al. 2024

Open Res Europe

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Background This article introduces an innovative classification methodology to identify nanowires within scanning electron microscope images. Methods Our approach employs advanced image manipulation techniques in conjunction with machine learning-based recognition algorithms. The effectiveness of our proposed method is demonstrated through its application to the categorization of scanning electron microscopy images depicting nanowires arrays. Results The method’s capability to isolate and distinguish individual nanowires within an array is the primary factor in the observed accuracy. The foundational data set for model training comprises scanning electron microscopy images featuring 240 III-V nanowire arrays grown with metal organic chemical vapor deposition on silicon substrates. Each of these arrays consists of 66 nanowires. The results underscore the model’s proficiency in discerning distinct wire configurations and detecting parasitic crystals. Our approach yields an average F1 score of 0.91, indicating high precision and recall. Conclusions Such a high level of performance and accuracy of ML methods demonstrate the viability of our technique not only for academic but also for practical commercial implementation and usage.

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Review: III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

Cited by 7 publications

References 184 publications

Simplified top-down fabrication of sub-micron silicon nanowires

Simplified top-down fabrication of sub-micron silicon nanowires

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Machine Learning Inspired Nanowire Classification Method based on Nanowire Array Scanning Electron Microscope Images

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