Single-Mode Emission in InP Microdisks on Si Using Au Antenna

Abstract

An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III–Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stability over a wider range of temperature can be challenging. Here, we explore the use of Au nanorod antennae on InP whispering gallery mode lasers on Si for single-mode emission. We show that by proper choice of the antenna size and positioning, we can suppress the side modes of a cavity and achieve single-mode emission over a wide excitation range. We establish emission trends by varying the size of the antenna and show that the far-field radiation pattern differs significantly for devices with and without antenna. Furthermore, the antenna-induced single-mode emission is dominant from room temperature (300 K) down to 200 K, whereas the cavity without an antenna is multimodal and its dominant emission wavelength is highly temperature-dependent.

Single-mode emission from a monolithically integrated III-V/Si topological lattice

“…Below threshold, we observe a blue shift of the emission wavelength that we attribute to free carrier plasma dispersion effects. This is something typically observed for similarly sized devices 25,37,38 . At the same time, the FWHM of the emission peak narrows significantly with its lowest value of 3 nm at threshold, where it becomes limited by the peak jitter during each individual pulse.…”

“…Compared to e.g. single mode microdisk lasers 25,37 , the proposed one-dimensional array can be easily integrated into existing PICs through direct in-plane coupling to Si waveguides. The adjacent placement of the III-V material next to Si is crucial here, as it not only removes the necessity for large, complex coupling schemes [40][41][42] in between two vertically separated layers, but also opens new paradigms in designing photonic systems.…”

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

“…This is something typically observed for similarly sized devices. 28,41,42 At the same time, the fwhm of the emission peak narrows significantly with its lowest value of 3 nm at the threshold, where it becomes limited by the chirp of each individual pulse that gets integrated during the measurement time. Above the threshold, the lasing wavelength remains stable under further increase of pump power because the free carrier plasma dispersion effect becomes less pronounced as the spontaneous emission background gets clamped.…”

“…Furthermore, this realization shows the potential of the hybrid III–V/Si concept as a versatile platform for realizing integrated topological photonic devices with enhanced functionalities. Compared to, e.g., single-mode microdisk lasers, , the proposed one-dimensional array can be easily integrated into existing PICs through direct in-plane coupling to Si waveguides. The adjacent placement of the III–V material next to Si is crucial here, as it not only removes the necessity for large, complex coupling schemes − in between two vertically separated layers but also opens new paradigms in designing photonic systems.…”

Plasma etching for fabrication of complex nanophotonic lasers from bonded InP semiconductor layers

“…First, low temperature chlorine-based chemistries, which aim to overcome the temperature challenge with ion bombardment or plasma heating. After attempting to reproduce results from literature [23][24][25], we settle on utilising and exploring the parameters of two previously developed recipes [26], similar to ref. [27].…”