Measurements of ultra-high energy lead ions using silicon and diamond detectors

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Single event effect (SEE) testing with ultrahigh energy (UHE) heavy ions, such as the beams provided at CERN, presents advantages related to their long ranges with a constant linear energy transfer value. In the present work, the possibility to test components in parallel is being examined, and results from the CERN 2018 UHE Pb test campaigns are studied. Furthermore, the generation of multibit upsets by the UHE Pb ions is evaluated, and the contribution of possible fragments to the SEE measurements is discussed.

Section: B Consideration On Beam Puritymentioning

confidence: 99%

Single Event Effect Testing With Ultrahigh Energy Heavy Ion Beams

Kastriotou

Wyrwoll

Bernhard

et al. 2020

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“…The setup allows collecting not only deposited energy values but entire current profiles with 1 ns resolution. This feature can be exploited for Pulse Shape Discrimination (PSD), for example in terms of amplitude or falling time [27], [28]. Fig.…”

Section: Event Classification Via Pulse Shape Discriminationmentioning

confidence: 99%

Mixed-Field Radiation Monitoring and Beam Characterization Through Silicon Diode Detectors

Biłko,

Alía,

Barbero

et al. 2024

We present a calibration of a commercial silicon diode with proton and alpha beams and gamma rays. The diode together with a fast acquisition chain, can be exploited for both direct and indirect (through the secondary radiation field) beam characterization. Within this work, we demonstrate the detector capabilities of resolving single energy deposition events and independently measuring dose rate and beam flux. Profiting from the mixed radiation field in CERN's CHARM facility we show how the silicon detector can be exploited to characterize the mixed radiation field present in it, which in turn is used for validating the radiation tolerance of components and systems to be installed in the CERN accelerator complex.

“…The diode was biased at 200 V by a Source Measurement Unit (SMU) Keithley 2410. The use of this type of diode for beam characterization has been presented before [15][16][17][18]. The signal generated in the diode is amplified using a CIVIDEC model C1HV0091 with 21.9 dB gain and then digitized using a CAEN DT5751.…”

Section: Beam Characterization Measurementsmentioning

confidence: 99%

Assessment of the Quirónsalud Proton Therapy Centre Accelerator for Single Event Effects Testing

Coronetti,

Emriskova,

Alía

et al. 2024

High-energy proton testing is used for single-event effect (SEE) qualification of electronics to be used in several radiation harsh environments. Given the increasing demand, exploiting the capabilities of proton therapy centres for electronics testing may become desirable. In this paper the focus is on the Quirónsalud proton therapy centre, which makes use of a synchrocyclotron to accelerate protons within an energy range of 70-226 MeV. Lower energies can be obtained with degradation. The use of a synchrocyclotron may pose unique challenges for SEE testing, as opposed to the use of a cyclotron, because the time structure of the beam is very complex and very intense instantaneous fluxes are delivered in highly localized areas of the device under test. Independent characterization measurements of the beam time structure and the beam uniformity were performed. SEE testing on some golden chips previously characterized in cyclotron facilities were also accomplished. These showed that the single-event upset (SEU) cross sections measured with this beam are in good agreement with those measured at cyclotrons in the 20-226 MeV proton energy range. As demonstrated by the SEU cross-sections and by the analysis of multiple-cell upsets (MCU), no beam pulse effects are observed that can alter the data collection on the chips despite the very intense instantaneous fluxes. A few limitations were also evidenced when testing with energies below 20 MeV and due to the fixed flux for testing.Index Terms-Single-event effects, high-energy protons, accelerator, pulsed beam effects, silicon diode dosimetry.