Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits

Budiman, Arief Suriadi; Shin, Hyungcheol; Kim, B.-J.; Hwang, Seon‐Hwan; Son, Hwa–Young; Suh, Min-Suk; Chung, Qwan-Ho; Byun, Kwang-Yoo; Tamura, Nobumichi; Kunz, Martin; Joo, Young‐Chang

doi:10.1016/j.microrel.2011.10.016

Cited by 133 publications

(42 citation statements)

References 12 publications

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“…X-Ray Diffraction was conducted on the samples using a Panalytical X’Pert 3 MRD system with a Cu alpha source (Λ = 1.54056 Å wavelength) at the University of Central Florida’s Material Characterization Facility (MCF) in Orlando, FL, USA. The instrument was used to confirm the orientation variations on a macroscopic scale.…”

Section: Methodsmentioning

confidence: 99%

The Impact of Organic Additives on Copper Trench Microstructure

Marro

Okoro

Obeng

et al. 2017

J. Electrochem. Soc.

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Organic additives are typically used in the pulse electrodeposition of copper (Cu) to prevent void formation during the filling of high aspect ratio features. In this work, the role of bath chemistry as modified by organic additives was investigated for its effects on Cu trench microstructure. Polyethylene glycol (PEG), bis(3-sulfopropyl) disulfide (SPS), and Janus green b (JGB) concentrations were varied in the Cu electrodeposition bath. Results indicated a correlation between the JGB/SPS ratio and the surface roughness and residual stresses in the Cu. Electron backscattering diffraction (EBSD) and transmission Kikuchi diffraction (TKD) were used to study the cross-sectional microstructure in the trenches. Finer grain morphologies appeared in trenches filled with organic additives as compared to additive-free structures. Cu trench (111) texture also decreased with increasing organic additive concentrations due to more pronounced influence of sidewall seed layers on trench features. Twin density in the microstructure closely tracked calculated stresses in the Cu trenches. A comprehensive microstructural analysis was conducted in this study, on an area of focus that has garnered little attention from the literature, yet can have a major impact on microelectronic reliability.

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Section: Methodsmentioning

confidence: 99%

The Impact of Organic Additives on Copper Trench Microstructure

Marro

Okoro

Obeng

et al. 2017

J. Electrochem. Soc.

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“…However, the magnitude of normal deviatoric stress component are lower and hence, the hydrostatic stress typically represents the bulk of the total normal stress which will be the subject of this section. The notation of the stresses below is based on the standard definition as described in the literatures [12,29].…”

Section: Residual Normal (Hydrostatic) Stress Evaluationmentioning

confidence: 99%

“…Synchrotron X-ray Microdiffraction (µSXRD) is a unique technique allowing high resolution, non-destructive quantitative stress and microstructure evolution examination of crystalline materials which has been used effectively and more recently in many advanced systems and novel technologies, such as in micro/nanoelectronics [12][13][14][15] and nanomaterials/technologies [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Probing stress and fracture mechanism in encapsulated thin silicon solar cells by synchrotron X-ray microdiffraction

Handara

Radchenko

Tippabhotla

et al. 2017

Solar Energy Materials and Solar Cells

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A B S T R A C TThin ( < 150 µm) silicon solar cell technology is attractive due to the significant cost reduction associated with it. Consequently, fracture mechanisms in the thin silicon solar cells during soldering and lamination need to be fully understood quantitatively in order to enable photovoltaics (PV) systems implementation in both manufacturing and field operations. Synchrotron X-ray Microdiffraction (µSXRD) has proven to be a very effective means to quantitatively probe the mechanical stress which is the driving force of the fracture mechanisms (initiation, propagation, and propensity) in the thin silicon solar cells, especially when they are already encapsulated. In this article, we present the first ever stress examination in encapsulated thin silicon solar cells and show how nominally the same silicon solar cells encapsulated by different polymer encapsulants could have very different residual stresses after the lamination process. It is then not difficult to see how the earlier observation, as reported by Sander et al. (2013) [1], of very different fracture rates within the same silicon solar cells encapsulated by different Ethylene Vinyl Acetate (EVA) materials could come about. The complete second degree tensor components of the residual stress of the silicon solar cells after lamination process are also reported in this paper signifying the full and unique capabilities of the Synchrotron X-Ray Microdiffraction technique not only for measuring residual stress but also for measuring other potential mechanical damage within thin silicon solar cells.

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“…[25][26][27][28][29][30][31][32] Micro-Raman spectroscopy is more suitable from a practical point of view. Since the probing depth of Raman spectroscopy is dependent on the excitation wavelength, choice of proper excitation wavelength is very important.…”

Section: Introductionmentioning

confidence: 99%

Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

Yoo¹,

Kim

Han

2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Characterization of silicon stress near copper (Cu)-filled through-silicon via(s) (TSVs) was demonstrated using high-resolution micro-Raman spectroscopy. For depth profiling of Si stress distribution near TSVs, a polychromator-based, multiwavelength excitation Raman measurement with different probing depths was used. The design concept of the polychromator-based, multiwavelength micro-Raman spectroscopy system, including the importance of the high-spectral resolution and multiwavelength excitation capability in three-dimensional (3-D) Si stress characterization, was described. Silicon stress near Cu-filled TSVs, with various sizes and layouts, was measured and analyzed before and after Cu annealing steps. Main factors impacting Si stress near Cu-filled TSVs are analyzed based on Raman characterization results on various types of TSV structures, layouts, and Cu annealing conditions. Large variations in Si stress in TSV arrays were measured in wafers with poor Cu fill characteristics and in wafers annealed in nonoptimized conditions. The Cu annealing sequence and annealing conditions are found to be significantly important for managing Si stress and the reliability of Cu-filled TSVs. Substantially lower Si stress was measured near Cu-filled TSVs with voids. Multiwavelength microRaman spectroscopy can be used as a very effective noncontact, nondestructive, inline TSV process and Si stress monitoring technique.

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Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits

Cited by 133 publications

References 12 publications

The Impact of Organic Additives on Copper Trench Microstructure

The Impact of Organic Additives on Copper Trench Microstructure

Probing stress and fracture mechanism in encapsulated thin silicon solar cells by synchrotron X-ray microdiffraction

Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

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