Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

Abstract

Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals. However, this technique does not separate the switching power due to the resistance of the MOSFET channel and due to the parasitic capacitances. In this paper, we propose a measurement method to extract the power dissipation due to the parasitic capacitances of a MOSFET, providing useful information for device selection and for the design of efficient power electronic systems. The proposed method is demonstrated on a basic boost converter. The proposed method shows that the existing method underestimates the turn-On losses by 41% and overestimates the turn-Off losses by 35%. INDEX TERMS Channel current, current diversion phenomenon, COSS losses, efficiency, power losses, power MOSFET, switching losses.

System Implementation Trade-Offs for Low-Speed Rotational Variable Reluctance Energy Harvesters

“…For diode-based rectifiers, it mainly depends on the voltage and the current . For MOSFET-based rectifiers, in addition to the conduction loss due to the drain-source on-resistance , the power loss is also affected by the drain-to-source switching loss [ 51 ]. It therefore depends on the input voltage ( ), voltage frequency ( ), threshold voltage ( ), load current ( ), and the output capacitance ( ) [ 29 , 51 , 52 ].…”

“…For MOSFET-based rectifiers, in addition to the conduction loss due to the drain-source on-resistance , the power loss is also affected by the drain-to-source switching loss [ 51 ]. It therefore depends on the input voltage ( ), voltage frequency ( ), threshold voltage ( ), load current ( ), and the output capacitance ( ) [ 29 , 51 , 52 ]. In this work, the switching loss can be neglected due to the low frequencies generated by the energy transducer provided in Table 3 .…”

Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs

“…As the arcade for power electronic systems maintains to rise, it is attracting more significant to choose a suitable power device for a specific application, to make the entire system more efficient. The losses caused due to inappropriate selection of the power devices are the main reason for their poor efficiency [1][2][3]. The desired and extensively used power semiconductor device is a power switch that helps to reduce electrical losses by using different semiconductor structures and techniques that allows them to perform at higher frequencies and voltages [1,4,5].…”

“…The losses caused due to inappropriate selection of the power devices are the main reason for their poor efficiency [1][2][3]. The desired and extensively used power semiconductor device is a power switch that helps to reduce electrical losses by using different semiconductor structures and techniques that allows them to perform at higher frequencies and voltages [1,4,5]. For years, silicon (Si) has dominated the power electronics industry.…”

On the Practical Evaluation of the Switching Loss in the Secondary Side Rectifiers of LLC Converters

“…Resonant and quasi-resonant converters aim to diminish or completely get rid of the switching loss contribution, i.e., soft-switching the power semiconductor devices. This can be accomplished by turning on at zero volts the so-called Zero Voltage Switching (ZVS) and turning off at zero current the so-called Zero Current Switching (ZCS) [5]. Among the resonant and quasi-resonant converters, the LLC has become very popular because of its simple circuitry (Figure 1) and the very high efficiencies it can achieve [6,7].…”