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Abstract

Measurements of the near-interface oxide traps (NIOTs) aligned to the conduction band of siliconcarbide (SiC) are of particular importance as these active defects are responsible for degradation of the channel-carrier mobility in 4H-SiC MOSFETs. In this brief, a new method for measurement of the active NIOTs with energy levels aligned to the conduction band is proposed. The method utilizes transient-current measurements on 4H-SiC MOS capacitors biased in accumulation. Nitrided oxide and dry oxide are used to illustrate the applicability of the proposed measurement method. Index Terms-4H-SiC MOS capacitor, 4H-SiC MOSFET, active near-interface oxide traps (NIOTs), NIOTs, transient current.

The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for the design and verification of power-electronic circuits. This paper shows that GaN-HEMTs can be modeled by selected equations from the standard MOSFET LEVEL 3 model in SPICE. A method is proposed for the extraction of SPICE parameters in these equations. The selected equations and the proposed parameter-extraction method are verified with measured static and dynamic characteristics of commercial GaN-HEMTs. Furthermore, a double pulse test is performed in LTSpice and compared to its manufacturer model to demonstrate the effectiveness of the MOSFET LEVEL 3 model. The advantage of the proposed approach to use the MOSFET LEVEL 3 model, in comparison to the alternative behavioral-based model provided by some manufacturers, is that users can apply the proposed method to adjust the parameters of the MOSFET LEVEL 3 model for the case of manufacturers who do not provide SPICE models for their HEMTs.