2016
DOI: 10.1016/j.microrel.2016.02.006
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Active defects in MOS devices on 4H-SiC: A critical review

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Cited by 56 publications
(48 citation statements)
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“…The density of interface states in 4H-SiC MOS structures has been extensively studied. A common observation is a relatively flat distribution in the bandgap with an exponential increase towards the conduction band edge E C [10][11][12] . Whereas the former part is often assigned to carbon-related defects directly at the interface 10,13 , the increase towards E C stems from electron traps in the oxide near the 4H-SiC/SiO 2 interface, so-called near interface traps (NITs) 14 .…”
Section: Resultsmentioning
confidence: 99%
“…The density of interface states in 4H-SiC MOS structures has been extensively studied. A common observation is a relatively flat distribution in the bandgap with an exponential increase towards the conduction band edge E C [10][11][12] . Whereas the former part is often assigned to carbon-related defects directly at the interface 10,13 , the increase towards E C stems from electron traps in the oxide near the 4H-SiC/SiO 2 interface, so-called near interface traps (NITs) 14 .…”
Section: Resultsmentioning
confidence: 99%
“…These electrons remain trapped for a very long time and repeated C-V measurements by sweeping in either direction will match the accumulation-to-depletion measurement. That is why standard C-V measurements on SiC MOS capacitors are performed from accumulation to depletion [9], [21]. However, the amount of this electron trapping depends on the value of positive voltage and the duration of positive-voltage biasing [22].…”
Section: Methodsmentioning
confidence: 99%
“…In spite of being commercialized and delivering higher performance compared to their silicon counterparts, 4H-SiC MOSFETs continue to suffer from low channel-carrier mobility [4], [5]. The low channel-carrier mobility is attributed to both interface [6], [7] and near-interface traps (NITs) [8], [9]. The most critical impact of these defects is at the operating gate voltage ( ), when the MOSFETs are biased in strong inversion.…”
Section: Introductionmentioning
confidence: 99%
“…For accurate simulation results, modelling the defects and traps is imperative. They directly influence the performance and strongly affect its reliability [51]. To highlight the effect of traps on the device performance and electrical characteristics, the P-i-N rectifier structure of Figure 9 was prepared for modelling and simulation.…”
Section: Silicon Carbidementioning
confidence: 99%