Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs
Vikas Joshi,
Peyush Pande,
Utkarsh Jadli
et al.
Abstract:In power conversion systems, where higher switching frequencies are required for miniaturization, the selection of power switches with lower power loss becomes essential for achieving better efficiency. At higher switching frequencies, the parasitic elements of the power switch largely dictate the efficiency of the power electronic system. Hence, it becomes critical to investigate the impact of parasitic losses on overall efficiency. The parasitic components of the power transistor vary with the semiconductor … Show more
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