Measurement and modelling of the characteristic parameters for silver Schottky contacts on layered p-GaSe compound in a wide temperature range

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

“…The temperature dependence of electrical characteristics of these devices has been widely investigated in the literature [35][36][37][38][39][40][41][42][43][44][45][46]. In our previous work [20], we have investigated temperature and voltage dependent current transport mechanisms in GaAs/AlGaAs single-quantum-well lasers using forward and reverse bias I-V measurements in the temperature range of 80-360 K. The analysis of the experimental I-V data of the studied structures indicated that the current-transport was controlled by the Thermionic Field-Emission (TFE) mechanism below 170 K and Thermionic Emission (TE) mechanism above 200 K. The high values of n especially at low temperatures showed that the conduction is controlled by TFE [7,20].…”

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

“…As can be seen in Fig. 5, the conventional Richardson plot has a nonlinear part below 160 K which may be caused by the temperature dependence of the BH and ideality factor, particularly pronounced at low temperatures, due to the existence of the surface inhomogeneities of the Si substrate [1][2][3][4][5][6]14,22]. That is, the observed behavior in the Richardson plot may be due to the spatially inhomogeneous BHs and potential fluctuations at the interface that contains low and high barrier areas [44,45].…”

“…Metal film deposition on Si semiconductor has received much attention for the fabrication of optoelectronics, microwave devices, and integrated circuits used in modern highsped optical system. Thus, due to the technological importance of metal-semiconductor Schottky contacts, a full understanding of their current-voltage (I-V) and capacitance-voltage (C-V) characteristics are of great interest [1][2][3][4][5][6][7][8][9]. Schottky contacts with low barrier height find applications in devices operating at cryogenic temperatures such as infrared detectors, sensors in thermal imaging, microwave diodes, gates of transistors and infrared and nuclear particle detectors [10][11][12][13][14].…”

“…Moreover, the temperature dependence of the I-V characteristics allows us to understand different aspects of conduction mechanisms across the MS interface and the study of different effects such as barrier inhomogeneities and surface states density on carrier transport at MS Schottky contacts [19][20][21][22][23]. The analysis of the I-V characteristics of SBDs based on the TE theory usually reveals an abnormal decrease in the BH˚b and an increase in the ideality factor n with decreasing temperature [1][2][3][4]15]. The decrease in the barrier height at low temperatures in fact leads to nonlinearity in the activation energy (ln(I 0 /T 2 ) versus 1/T) plot.…”

“…Many experimental and theoretical studies of the current flow mechanism in Schottky barriers have been reported in the literature [2,6,[10][11][12][23][24][25][26]. For example, Hasegawa et al [27,28] have characterized both experimentally and theoretically electrical properties of nanometer-sized Schottky contacts which are successfully formed on n-GaAs and n-InP substrates by a combination of an electrochemical process and an electron-beam (EB) lithography.…”