Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics

“…The current conduction mechanisms in these devices depend on various parameters. Especially, the series resistance (R s ) of device and organic interfacial layer at M/S interface play an important role in the C-V and G/ω-V characteristics [10][11][12][13][14][15][16][17][18][19][20][21]. R s is one of the important sources of small signal energy loss in MS and MIS structures [6,7,10] and it can stem from five different sources: (1) the contact made by the probe wire to the gate; (2) the back contact of semiconductor; (3) impurities in semiconductor; (4) the resistance * Corresponding author.…”

Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K

“…As explained by Horvarth [26], the value of A n obtained from the temperature dependence of the forward bias I-V characteristics may be effected by lateral in homogeneity of the barrier. Therefore, the lower value of experimentally determined A n indicates that the effective active area is in fact much smaller than the diode rectifier contact area [18][19][20][21][22][23][24][25][26][27][28][29]. As temperature increase, the lower BH of the patches at MS interface is offset by the much greater area of the uniform region, as a result, most current flows through the uniform region.…”

“…This case can be attributed to the existence of insulator layer at M/S interface, particular distribution of N ss at semiconductor band-gap and the image force lowering of the barrier [11][12][13][14][15][16][17][18]. Change in the F bo and n with changing temperature have been explained on the basis of the TE theory with a GD of the BHs by many researches [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33]. Biber et.…”

On the electrical characteristics of the Al/rhodamine-101/p-Si MS structure at low temperatures

“…Bowing of the experimental ln(I 0 /T 2 ) versus 1/kT curve may be caused by the temperature dependence of the BH and ideality factor due to the existence of the surface inhomogeneities of the Si substrate [45,46,55,58]. Also, the deviation in the Richardson plots may be due to the spatially inhomogeneous BHs and potential fluctuations at the interface that consist of low and high barrier areas [58][59][60][61][62]. That is, the current through the diode will flow preferentially through the lower barriers in the potential distribution.…”