Materials with layered structures IV: CoGa1.8V0.2S4 and CoGa1.8Ti0.2S4 two new compounds with FeGa2S4 structure

Haeuseler, H.; Cordes, W.

doi:10.1016/0025-5408(90)90219-r

Cited by 7 publications

(2 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to Razzetti and Lottici, ZnIn 2 S 4 layered phases should be obtained in sulfide systems with one end member crystallizing in the spinel structure and the other one in the thiogallate structure type. This concept, which is based on the site preference of the metal ions, has been improved by Lutz et al In some cases, new compounds crystallizing with ZnIn 2 S 4 (IIIa) (Figure ) type structures were obtained either at a fixed composition, CoGa 1.5 Cr 0.5 S 4 CoTi 0.3 Ga 1.7 S 4 , or MnTi 0.4 Ga 1.6 S 4 , or for a limited range of homogeneity for, e.g., in the systems CdIn 2 S 4 - CdIn 2 Se 4 , MnIn 2 S 4 - MnIn 2 Se 4 , or FeIn 2 S 4 - FeIn 2 Se 4 as a single phase. These layered materials are essentially interesting because of their anisotropic physical properties and find applications in the development of photodetectors, switches, and photovoltaic devices .…”

Section: Introductionmentioning

confidence: 99%

Electrical, Optical, and Scanning Tunneling Microscopic Studies on Layer Type CdIn₂S_4-_xSe_x (1.75 ≤ x ≤ 2.75)

Srivastava¹,

Pramanik²,

Palit³

et al. 2001

Chem. Mater.

Self Cite

View full text Add to dashboard Cite

The present paper deals with the microstructural parameters calculated from X-ray diffraction data, electrical and optical investigations, and scanning tunneling microscopy (STM) studies on ZnIn 2 S 4 IIIa layer type CdIn 2 S 4-x Se x (1.75 e x e 2.75) quaternary chalcogenides. Microstructural parameters such as dislocation density, root-mean-square strain, stacking fault probability, crystallite size anisotropy, and layer disorder parameters of these compounds have been calculated. The temperature variation of electrical conductivity (25-400 °C) confirmed semiconducting behavior. The band gaps of all these compounds obtained from STM and optical measurements are in the range 1.57-1.77 eV and are comparable to each other irrespective of the technique used.

show abstract

Section: Introductionmentioning

confidence: 99%

Electrical, Optical, and Scanning Tunneling Microscopic Studies on Layer Type CdIn₂S_4-_xSe_x (1.75 ≤ x ≤ 2.75)

Srivastava¹,

Pramanik²,

Palit³

et al. 2001

Chem. Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

“…According to Razzetti and Lottici, ZnIn 2 S 4 layered phases should be obtained in sulfide systems with a mixed cation sublattice with one endmember crystallizing in the spinel structure and the other one crystallizing in the thiogallate structure. This concept which is based on the site preference of the metal ions has been introduced by Lutz et al In some cases, new compounds crystallizing with ZnIn 2 S 4 −IIIa-type structures were obtained either at a fixed composition of CoGa 1.5 Cr 0.5 S 4 , CoTi 0.3 Ga 1.7 S 4 , or MnTi 0.4 Ga 1.6 S 4 , or for a limited range of homogeneity, for example, in the one-phase systems CdIn 2 S 4 −CdIn 2 Se 4 , MnIn 2 S 4 −MnIn 2 Se 4 , and FeIn 2 S 4 −FeIn 2 Se 4 . These layered materials, as other 2D-analogues such as MoS 2 and WS 2 , are essentially interesting because of their anisotropic physical properties and find applications in the development of photodetectors, switches, and photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

X-ray Diffraction, Topographical Studies, and Thermal Behavior of Layer-Type CdIn₂S_4-_xSe_x (1.75 ≤ x ≤ 2.75) and Its Lithium Intercalation Compounds

Srivastava¹,

Pramanik²,

Palit³

et al. 2004

Chem. Mater.

Self Cite

View full text Add to dashboard Cite

The present paper deals with the preparation of ZnIn2S4−IIIa layer-type CdIn2S4 - x Se x (1.75≤ x ≤ 2.75) quaternary chalcogenides and their characterization. X-ray diffraction studies of CdIn2S4 - x Se x (1.75 ≤ x ≤ 2.75) confirmed that all of these compounds possess the ZnIn2S4−IIIa type of structure. The variation of the composition x shows that both lattice parameters a- and c increase with a growing amount of selenium in the crystals. The calculation of microstructural parameters by an X-ray line profile analysis has shown that the intercalation of lithium in the host CdIn2S2Se2 is accompanied by a decrease in crystallite size while the dislocation density and the rms strain are increasing. The process of intercalation results in no expansion along the c-axis, probably due to no increase in the c-parameter at all in a given intercalation process; which does not have purely geometric origin but also comes from electronic effects. A radial distribution function (RDF) analysis of these quaternary chalcogenides indicated the presence of peaks at ∼2.5 and 4.5 Å metal−chalcogen and metal−metal distances, respectively. The peaks above 6 Å are due to the higher order metal−chalcogen and chalcogen−chalcogen distances. The apparent crystallite size of CdIn2S4 - x Se x (1.75 ≤ x ≤ 2.75) compounds deduced from X-ray studies has been correlated with the scanning electron micrographs. Scanning tunneling microscopic studies revealed that the surface of the CdIn2S2Se2 crystals is not smooth. All of the compounds are thermally stable up to about 450 °C in air atmosphere.

show abstract

Phase relationships in mixed metal germanium sulfide systems (Mn2GeS4T2GeS4, where T = Co, Ni, Zn)

Haeuseler

Stork

1992

Materials Research Bulletin

View full text Add to dashboard Cite

Materials with layered structures IV: CoGa1.8V0.2S4 and CoGa1.8Ti0.2S4 two new compounds with FeGa2S4 structure

Cited by 7 publications

References 8 publications

Electrical, Optical, and Scanning Tunneling Microscopic Studies on Layer Type CdIn₂S_4-_xSe_x (1.75 ≤ x ≤ 2.75)

Electrical, Optical, and Scanning Tunneling Microscopic Studies on Layer Type CdIn₂S_4-_xSe_x (1.75 ≤ x ≤ 2.75)

X-ray Diffraction, Topographical Studies, and Thermal Behavior of Layer-Type CdIn₂S_4-_xSe_x (1.75 ≤ x ≤ 2.75) and Its Lithium Intercalation Compounds

Phase relationships in mixed metal germanium sulfide systems (Mn2GeS4T2GeS4, where T = Co, Ni, Zn)

Contact Info

Product

Resources

About

Materials with layered structures IV: CoGa1.8V0.2S4 and CoGa1.8Ti0.2S4 two new compounds with FeGa2S4 structure

Cited by 7 publications

References 8 publications

Electrical, Optical, and Scanning Tunneling Microscopic Studies on Layer Type CdIn2S4-xSex (1.75 ≤ x ≤ 2.75)

Electrical, Optical, and Scanning Tunneling Microscopic Studies on Layer Type CdIn2S4-xSex (1.75 ≤ x ≤ 2.75)

X-ray Diffraction, Topographical Studies, and Thermal Behavior of Layer-Type CdIn2S4-xSex (1.75 ≤ x ≤ 2.75) and Its Lithium Intercalation Compounds

Phase relationships in mixed metal germanium sulfide systems (Mn2GeS4T2GeS4, where T = Co, Ni, Zn)

Contact Info

Product

Resources

About

Electrical, Optical, and Scanning Tunneling Microscopic Studies on Layer Type CdIn₂S_4-_xSe_x (1.75 ≤ x ≤ 2.75)

Electrical, Optical, and Scanning Tunneling Microscopic Studies on Layer Type CdIn₂S_4-_xSe_x (1.75 ≤ x ≤ 2.75)

X-ray Diffraction, Topographical Studies, and Thermal Behavior of Layer-Type CdIn₂S_4-_xSe_x (1.75 ≤ x ≤ 2.75) and Its Lithium Intercalation Compounds