X-ray Diffraction, Topographical Studies, and Thermal Behavior of Layer-Type CdIn₂S_4-xSe_x (1.75 ≤ x ≤ 2.75) and Its Lithium Intercalation Compounds

Abstract

The present paper deals with the preparation of ZnIn2S4−IIIa layer-type CdIn2S4 - x Se x (1.75≤ x ≤ 2.75) quaternary chalcogenides and their characterization. X-ray diffraction studies of CdIn2S4 - x Se x (1.75 ≤ x ≤ 2.75) confirmed that all of these compounds possess the ZnIn2S4−IIIa type of structure. The variation of the composition x shows that both lattice parameters a- and c increase with a growing amount of selenium in the crystals. The calculation of microstructural parameters by an X-ray line profile analysis has shown that the intercalation of lithium in the host CdIn2S2Se2 is accompanied by a decrease in crystallite size while the dislocation density and the rms strain are increasing. The process of intercalation results in no expansion along the c-axis, probably due to no increase in the c-parameter at all in a given intercalation process; which does not have purely geometric origin but also comes from electronic effects. A radial distribution function (RDF) analysis of these quaternary chalcogenides indicated the presence of peaks at ∼2.5 and 4.5 Å metal−chalcogen and metal−metal distances, respectively. The peaks above 6 Å are due to the higher order metal−chalcogen and chalcogen−chalcogen distances. The apparent crystallite size of CdIn2S4 - x Se x (1.75 ≤ x ≤ 2.75) compounds deduced from X-ray studies has been correlated with the scanning electron micrographs. Scanning tunneling microscopic studies revealed that the surface of the CdIn2S2Se2 crystals is not smooth. All of the compounds are thermally stable up to about 450 °C in air atmosphere.

AC Conductivity and Dielectric Relaxation Behavior of Sb2S3 Bulk Material

“…It has an orthorhombic layered structure. 10,11 The values of the electronic gap of amorphous and crystalline Sb 2 S 3 thin films are 2.20 eV and 1.78 eV, respectively. 12,13 Due to the direct band gap and excellent photoconductivity of Sb 2 S 3 , it can be widely exploited in television cameras, microwave devices, and other optoelectronic devices.…”

Hydrothermal Growth of CuS Nanowires from Cu−Dithiooxamide, a Novel Single-Source Precursor

“…Semiconductor metal sulfides, especially MoS 2 , , Bi 2 S 3 , CuS, CdS, ZnS, and PbS and A 2 S 3 -M 2 S 3 -M‘S (A = Ga, In; M = trivalent metal; M‘ = divalent metal), , have attracted ever increasing attention in the past few years, due to their excellent physical as well as chemical properties. But very recently, a considerable amount of interest has been focused on copper sulfides owing to their variations in stoichiometric composition, valence states, nanocrystal morphologies, complex structures, and different unique properties. , The stoichiometric composition of copper sulfide varies in a wide range from Cu 2 S at the copper-rich side to CuS 2 at the copper-deficient side, such as CuS, Cu 1.96 S, Cu 1.94 S, Cu 1.8 S, Cu 7 S 4 , and Cu 2 S …”

Structural, surface and mechanical characterization of spray-deposited molybdenum disulfide thin films

“…Layered materials such as metal oxychlorides [1], graphite [2], transition metal dichalcogenides (TMDs) [3,4] and quasi ternary systems [5,6] have tribological properties because of their anisotropic nature [7]. MoS 2 , MoSe 2 , WS 2 , and WSe 2 are the most commonly used TMDs in various applications, such as tunnel field effect transistor [8], photovoltaic devices [9], tutelage of industrial surfaces [10] and aviation [11].…”