Phase relationships in mixed metal germanium sulfide systems (Mn2GeS4T2GeS4, where T = Co, Ni, Zn)

Haeuseler, H.; Stork, H.J.

doi:10.1016/0025-5408(92)90191-2

Cited by 3 publications

(2 citation statements)

References 10 publications

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“…The grazing incidence X‐ray diffraction (GIXRD) pattern of the samples confirms the formation of crystalline CZGS (see Figure a). ZnS [ 27 ] phases are detected; however, other secondary phases such as Cu 2– x S, Zn 2 GeS 4 , [ 28 ] Cu 2 GeS 3 , [ 29,30 ] and GeO 2 could be present but are not visible by X‐ray diffraction due to peak overlap or small volume. The microstructural properties of the annealed CZGS absorbers are shown in Figure S1 in the supporting information (SI) (cross‐sectional scanning electron microscopy [SEM]).…”

Section: Resultsmentioning

confidence: 99%

Record 1.1 V Open‐Circuit Voltage for Cu₂ZnGeS₄‐Based Thin‐Film Solar Cells Using Atomic Layer Deposition Zn_1‐xSn_xO_y Buffer Layers

et al. 2021

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The Cu2ZnGe X Sn1‐X S4 (CZGTS) thin‐film solar cells have a limited open‐circuit voltage (V OC) due to bulk and interface recombination. Since the standard CdS buffer layer gives a significant cliff‐like conduction band offset to CZGTS, alternative buffer layers are needed to reduce the interface recombination. This work compares the performance of wide bandgap Cu2ZnGeS4 (CZGS) solar cells fabricated with nontoxic Zn x Sn1–x O y (ZTO) buffer layers grown by atomic layer deposition under different conditions. The V OC of the CZGS solar cell improved significantly to over 1 V by substituting CdS with ZTO. However, V OC is relatively insensitive to ZTO bandgap variations. The short‐circuit current is generally low but is improved with KCN etching of the CZGS absorber before deposition of the ZTO buffer layer. A possible explanation for the device behavior is the presence of an oxide interlayer for nonetched devices.

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Section: Resultsmentioning

confidence: 99%

Record 1.1 V Open‐Circuit Voltage for Cu₂ZnGeS₄‐Based Thin‐Film Solar Cells Using Atomic Layer Deposition Zn_1‐xSn_xO_y Buffer Layers

et al. 2021

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“…This shift in GIXRD peaks towards higher 2 θ values agrees with previous studies and is due to the replacement of Sn with the smaller Ge atom leading to shrinking of the lattice. There is no clear evidence of secondary phases in GIXRD, although some phases, such as ZnS, Zn 0.5 Ge 0.25 S, Cu 2 GeS 3 (CGS), Cu 2 SnS 3 (CTS), Cu 4 SnS 4 , and GeO 2 , are difficult to distinguish due to the peak overlap. Therefore, the GIXRD measurement is not sufficient to evince dominance of single‐phase tetragonal CZGTS.…”

Section: Resultsmentioning

confidence: 99%

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient

Saini

Larsen

Sopiha

et al. 2019

Physica Status Solidi (a)

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Alloying of Cu2ZnSnS4 (CZTS) with Ge can potentially promote grain growth and suppress the formation of Sn‐related defects. Herein, a two‐step fabrication route based on compound co‐sputtering and sulfurization at a high temperature is used to prepare Ge‐incorporated CZTS (Cu2ZnGexSn1 − xS4 [CZGTS]). For Cu2ZnGeS4 (CZGS), films deposited using elemental Ge and binary GeS targets are compared. The recrystallization is shown to be promoted for the absorbers deposited using Ge target, possibly due to lower sulfur content in the precursor suppressing the formation of wurtzite‐like phases during sputtering. The grain growth and crystallinity in CZGTS are slightly improved for x = 0.2 but not for higher concentration of the incorporated Ge. Owing to the composition‐dependent electronic properties, compositionally graded CZGTS films may be beneficial for reducing recombination towards the back contact. Hence, herein, the successful formation of a steep concentration gradient with Ge and Sn is demonstrated by the deposition of a CZGS/CZTS precursor stack followed by sulfurization with varying time periods.

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Ternary Transition Metal Sulfides

Eichhorn¹

1994

Progress in Inorganic Chemistry

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Phase relationships in mixed metal germanium sulfide systems (Mn2GeS4T2GeS4, where T = Co, Ni, Zn)

Cited by 3 publications

References 10 publications

Record 1.1 V Open‐Circuit Voltage for Cu₂ZnGeS₄‐Based Thin‐Film Solar Cells Using Atomic Layer Deposition Zn_1‐xSn_xO_y Buffer Layers

Record 1.1 V Open‐Circuit Voltage for Cu₂ZnGeS₄‐Based Thin‐Film Solar Cells Using Atomic Layer Deposition Zn_1‐xSn_xO_y Buffer Layers

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient

Ternary Transition Metal Sulfides

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Phase relationships in mixed metal germanium sulfide systems (Mn2GeS4T2GeS4, where T = Co, Ni, Zn)

Cited by 3 publications

References 10 publications

Record 1.1 V Open‐Circuit Voltage for Cu2ZnGeS4‐Based Thin‐Film Solar Cells Using Atomic Layer Deposition Zn1‐xSnxOy Buffer Layers

Record 1.1 V Open‐Circuit Voltage for Cu2ZnGeS4‐Based Thin‐Film Solar Cells Using Atomic Layer Deposition Zn1‐xSnxOy Buffer Layers

Germanium Incorporation in Cu2ZnSnS4 and Formation of a Sn–Ge Gradient

Ternary Transition Metal Sulfides

Contact Info

Product

Resources

About

Record 1.1 V Open‐Circuit Voltage for Cu₂ZnGeS₄‐Based Thin‐Film Solar Cells Using Atomic Layer Deposition Zn_1‐xSn_xO_y Buffer Layers

Record 1.1 V Open‐Circuit Voltage for Cu₂ZnGeS₄‐Based Thin‐Film Solar Cells Using Atomic Layer Deposition Zn_1‐xSn_xO_y Buffer Layers

Germanium Incorporation in Cu₂ZnSnS₄ and Formation of a Sn–Ge Gradient