Mapping of Single Event Burnout in Power MOSFETs

Haran, A.; Barak, J.; David, D.; Refaeli, Nati; Fischer, B.; Voss, Kay‐Obbe; Du, Guohao; Heiss, M. M.

doi:10.1109/tns.2007.910851

Cited by 26 publications

(6 citation statements)

References 24 publications

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“…The cuts also exhibit that no SEB are triggered below the P body, which is consistent with preceding results [16], [17].…”

Section: B Seb Sensitive Volume Mapping Of a 200 V Power Mosfets In supporting

confidence: 91%

“…2, for various values of the laser energy and three values of the Drain-Source bias . Point A is under the gate, near the channel edge, this position has already been identified as highly sensitive for other HEXFETs ( [16], [17]). The -axis of Fig.…”

Section: ) Tpa Probe Effective Lengthmentioning

confidence: 80%

“…2 for V. This point is located under the source contact which is known to be the less sensitive region of this type of devices [9], [16], [17]. No SEB signal has been observed at any depth at energies lower than 3 nJ.…”

Section: A Seb Sensitivementioning

confidence: 97%

See 2 more Smart Citations

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Darracq¹,

Mbaye²,

Azzopardi³

et al. 2012

IEEE Trans. Nucl. Sci.

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“…The cuts also exhibit that no SEB are triggered below the P body, which is consistent with preceding results [16], [17].…”

Section: B Seb Sensitive Volume Mapping Of a 200 V Power Mosfets In supporting

confidence: 91%

Section: ) Tpa Probe Effective Lengthmentioning

confidence: 80%

See 1 more Smart Citation

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Darracq¹,

Mbaye²,

Azzopardi³

et al. 2012

IEEE Trans. Nucl. Sci.

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show abstract

“…It is located in the intercellular region right next to the channel. This position indeed was found by different experimental studies and numerical simulations to be among the most sensitive positions to SEB [ROU93], [LUU08], [HAR07]. Besides, this position x 0 for the charge generation enables to simulate only half of a VDMOS cell since the influence of the adjacent half cell can be considered to be negligible.…”

Section: Simulation Tool and Test Vehicle Descriptionsmentioning

confidence: 55%

Sensitive volume and triggering criteria of SEB in classic planar VDMOS

Luu¹,

Austin²,

Miller

et al. 2009

2009 European Conference on Radiation and Its Effects on Components and Systems

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“…For terrestrial applications, a single event induced burnout can happen when heavy ions, also called cosmic rays, strike a device [43], [44]. Radiation-hardened materials and structures have been reported [34], [45].…”

Section: ) External Radiation-mobile Ions and Particlesmentioning

confidence: 99%

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Yang

Xiang

Bryant

et al. 2010

IEEE Trans. Power Electron.

977

348

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Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.

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Mapping of Single Event Burnout in Power MOSFETs

Cited by 26 publications

References 24 publications

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Sensitive volume and triggering criteria of SEB in classic planar VDMOS

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

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