Luminescence spectra of an Al∕SiO2∕p-Si tunnel metal-oxide-semiconductor structure

Yoder, P. Douglas; Vexler, M. I.; Shulekin, A. F.; Asli, N. A.; Gastev, S. V.; Grekhov, I. V.; Seegebrecht, P.; Tyaginov, Stanislav; Zimmermann, Horst

doi:10.1063/1.2099507

Cited by 5 publications

(6 citation statements)

References 28 publications

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“…2) exhibit pronounced peaks at hν = 3.4 eV and 4.5 eV, but at 5.4 eV the intensity is only weakly perturbed. All the spectra show an intensity increase at low photon energies which is consistent with the luminescence of almost thermalized carriers observed also on Si MOS capacitors [22]. No radiation was detected from the n-Si samples for V < 0, unless we previously touched the Si surface with the W tip.…”

supporting

confidence: 86%

“…Intensity (arbitrary units) a n-Si(111) These optical processes are localized at a depth of about 10 nm in Si [22], so that a large fraction of emitted photons should reach the detector without reabsorption.…”

Section: Photon Energy (Ev)mentioning

confidence: 99%

“…A second injected electron 2 can then radiatively recombine with 1 ′ p . These optical processes are localized at the depth of about ten nm in Si [22], so that a large fraction of emitted a p-Si Tip photons should reach the detector without reabsorption. The above scenario is valid for both p-and n-type silicon.…”

mentioning

confidence: 99%

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Ultraviolet Light Emission from Si in a Scanning Tunneling Microscope

2007

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Ultraviolet and visible radiation is observed from the contacts of a scanning tunneling microscope with Si(100) and (111) wafers. This luminescence relies on the presence of hot electrons in silicon, which are supplied, at positive bias on n- and p-type samples, through the injection from the tip, or, at negative bias on p samples, by Zener tunneling. Measured spectra reveal a contribution of direct optical transitions in Si bulk. The necessary holes well below the valence band edge are injected from the tip or generated by Auger processes.

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supporting

confidence: 86%

Section: Photon Energy (Ev)mentioning

confidence: 99%

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Ultraviolet Light Emission from Si in a Scanning Tunneling Microscope

2007

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“…Light emission from MISJs has been studied before, − but so far all MISJ studies have used Si with low doping levels ( N d = 10 14 –10 16 cm –3 ) and only measurable amounts of light could be detected by applying large voltages (3–11 V). − ,− Although the majority of these studies claim electroluminescence from electron–hole recombination as the origin of light emission, − ,− ,− others , , disagree and claim that light emission occurs via radiative decay of SPPs excited via inelastic tunneling. It is well-known that MISJs with low doping levels result in Schottky diodes (Figure a) where the most likely mechanism for light emission involves electroluminescence from electron–hole recombination, as well as light emission from dielectric breakdown, for applied bias voltages of >2 V .…”

mentioning

confidence: 99%

Silicon-Based Quantum Mechanical Tunnel Junction for Plasmon Excitation from Low-Energy Electron Tunneling

et al. 2021

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Light emission from metal−insulator−semiconductor junctions (MISJs) has been explored for decades as a possible on-chip light source; however it is not clear whether the mechanism of light emission is plasmonic in nature or is dominated by electroluminescence. Previous studies only investigated silicon with low doping levels, but here we show that only highly doped silicon allows us to excite surface plasmon polaritons (SPPs) in MISJs via inelastic tunneling. This paper describes the mechanism of charge transport and light emission from siliconbased Au-SiO 2 -nSi MISJs as a function of the doping level N d varying from 1.6 × 10 15 cm −3 to 1.0 × 10 20 cm −3 . At low doping levels (N d ∼ 10 15 cm −3 ), the MISJs behave as Schottky diodes, and the mechanism of light emission involves a radiative recombination of electrons and holes from minority carrier injection under high applied bias (>5.5 V). With increasing doping levels, the current−voltage characteristics of the MISJs change, resulting in symmetrical current−voltage curves with parabolic conductance behavior characteristic of quantum mechanical tunneling. MISJs with the highest doping level (N d ∼ 10 20 cm −3 ) are dominated by quantum mechanical tunneling, and light emission originates from radiative decay of surface plasmon polaritons (SPPs) via scattering at threshold voltages as low as 1.5 V. Our simulations indicate that tunneling over the thin SiO 2 barrier between the Au and highly doped nSi excites a hybrid-SPP mode localized to the Au whose dispersion depends on the effective index induced by the SiO 2 −nSi interface. Our studies show that Si needs to be sufficiently doped to be conductive enough to enable SPP excitation via inelastic tunneling.

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“…For the p-MOSTD as shown in Figure 5 (a), the hot electrons with high energy which are injected from the ITO to the p-Si transit to the bottom of the Si conduction band. The EL in the visible region is considered to originate from the transition between states of the conduction band (8). The electrons recombine with holes accumulated at the Si/SiO 2 interface, and then the EL corresponding to the Si band gap is observed.…”

Section: Resultsmentioning

confidence: 99%

Electroluminescence in Metal-Oxide-Semiconductor Tunneling Diodes with Ultra Thin Silicon

Matsumura¹,

Yamada²,

Arima³

et al. 2009

ECS Trans.

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Electroluminescence characteristics of a metal-oxide-semiconductor tunneling diode on a silicon-on-insulator wafer have been studied. The spectrum from the diode is peaked at 1050 nm (1.18 eV) and at 1145 nm (1.08 eV). The spectrum from the diode on a silicon wafer is peaked at 1145 nm. The peak at 1145 nm can be assigned as phonon-assisted indirect transitions. It is indicated that the peak at 1050 nm is due to the quantum confinement in an ultra thin silicon layer.

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Luminescence spectra of an Al∕SiO2∕p-Si tunnel metal-oxide-semiconductor structure

Cited by 5 publications

References 28 publications

Ultraviolet Light Emission from Si in a Scanning Tunneling Microscope

Ultraviolet Light Emission from Si in a Scanning Tunneling Microscope

Silicon-Based Quantum Mechanical Tunnel Junction for Plasmon Excitation from Low-Energy Electron Tunneling

Electroluminescence in Metal-Oxide-Semiconductor Tunneling Diodes with Ultra Thin Silicon

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