Electroluminescence characteristics of a metal-oxide-semiconductor tunneling diode on a silicon-on-insulator wafer have been studied. The spectrum from the diode is peaked at 1050 nm (1.18 eV) and at 1145 nm (1.08 eV). The spectrum from the diode on a silicon wafer is peaked at 1145 nm. The peak at 1145 nm can be assigned as phonon-assisted indirect transitions. It is indicated that the peak at 1050 nm is due to the quantum confinement in an ultra thin silicon layer.
Electroluminescence characteristics of metal-oxide-semiconductor tunnel diodes with a silicon nano-layer on silicon-on-insulator substrates have been studied. Peaks in the spectrum from the diode have been observed at ~1030 nm (~1.20 eV), ~950 nm (~1.31 eV), ~910 nm (~1.36 eV) and ~620 nm (~2.00 eV). It is suggested that the electroluminescence at ~620 nm is due to transitions between ultrathin silicon subbands.
Electroluminescence in metal-oxide-semiconductor tunnel diodes with a transparent conductive oxide gate and a nanometer-thick silicon layer on silicon-on-insulator substrates has been studied. The electroluminescence spectra from the diodes are peaked at ~1120 nm (~1.11 eV). The peak shifts toward lower energy as the negative gate voltage value increases. The peak shift can be explained by a Stark effect. The peak tail intensity at the short-wavelength side of the peak at ~1120 nm increases as the silicon layer thickness decreases. This may indicate that the increase in the intensity is due to transitions between subbands near the silicon band edges. Small peaks have been observed at ~1050 nm (~1.18 eV) and ~1010 nm (~1.23 eV). The peak wavelengths are independent of the silicon layer thickness. This exhibits that the electroluminescence is due to defect-mediated transitions.
Ten polymorphic microsatellite markers were developed in the drywood termite Incisitermes minor (Hagen) by using a genomic DNA extracted from the heads of workers. The microsatellite markers obtained in this study produced between two and seven alleles per locus. The observed and expected heterozygosities among the 10 markers ranged from 0.16 to 0.83 and from 0.43 to 0.84, respectively. These markers were shown to be good molecular tools for identification of the genetic structure and parentage assessment in I. minor .
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