No abstract

The value of m h = 0.33 m 0 has been experimentally obtained for hole effective mass in a tunnel-thin (2-3 nm) SiO 2 film. The use of this value ensures the adequate modelling of a direct-tunnelling hole current in MOS devices. For the first time, in order to determine m h , the characteristics of a MOS tunnel emitter transistor have been mathematically processed, that allows for the precise estimation of the effective oxide thickness, as the electron effective mass in SiO 2 is independently known from the literature. The formulae for simulation of currents in a tunnel MOS structure are listed along with the necessary parameter values.

No abstract

The 2D consideration of the hole gas in the inversion layer is shown to be essential for a correct estimation of the currents flowing in the tunnel MOS structure on (100) n-Si and (111) n-Si substrates. The classical (3D) treatment is found to lead to significant errors in the predicted distribution of the applied voltage, which results in incorrect evaluation of currents and makes the performance of a careful analysis of the energy relaxation of injected hot electrons impossible. A complete quantum treatment for an inversion should be based on the self-consistent solution of Poisson-Schrödinger equations, as is done for MOSFETs. The hole tunnel current is to be calculated as a sum of currents from discrete levels. A simplified quantum approximation is also examined for the tunnel MOS structure. The quantization effects are shown to be important in almost all practically interesting operational modes, especially for high insulator bias and high doping concentration.

No abstract