Silicon Auger transistor—New insight into the performance of a tunnel MIS emitter transistor

The post-damage behavior of a MOS tunnel emitter transistor

“…due to thickness distribution, should be admitted. Sample fabrication procedure included the standard MOS technology steps and was similar to that described in [4]. The reproducibility of device characteristics (before any damage) was very good: the sample-to-sample differences would not be discernable at the scale of Fig.…”

“…Its hj C i (U CE ) curves elucidate the bistability due to the positive feedback arising from impact generation (or, more exactly, from a combined action of Auger [4,6] and impact ionizations); the width of the S-shape segment depends primarily on the donor concentration N D , being larger for smaller N D [7]. In presence of a base current, this segment would become narrower.…”

“…The tunnel Metal-Oxide-Semiconductor (MOS) emitter transistor [1][2][3][4] is a pMOS structure in which the n-silicon substrate is taken as a collector, the metal electrode serves as an emitter while a base is induced by the inversion hole layer and is accessed to through the adjacent p + -contact (Fig. 1).…”

“…1). The positive aspects of the performance of this transistor are very small base transit time [4], satisfactory high-frequency properties [3] and a high gain value [2][3][4]. The latter relies on the dominance of the electron tunneling over the hole tunneling [1,2] and also on the intrinsic generation of minority carriers by the injected hot electrons [4].…”

“…Static characteristics of a tunnel emitter transistor were reported in [1,2,4]. In the present work, we aim to concentrate on the occurrence of the oxide degradation and breakdown in this device.…”