Luminescence of Er-doped amorphous silicon quantum dots

Park, Nae Man; Kim, Tae Youb; Kim, Sang Hyeob; Sung, Gun Yong; Cho, Kwan Sik; Shin, Jung H.; Kim, Baek Hyun; Park, Seong Ju; Lee, Jung Kun; Nastasi, M.

doi:10.1016/j.tsf.2004.08.053

Cited by 14 publications

(8 citation statements)

References 10 publications

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“…Article tal size > 7 nm), in agreement with other groups [6]. PL was excited off-resonance, so to have intense PL at room temperature two factors are necessary: efficient excitation -(absorption by some sensitizers i.e.…”

Section: Contributedsupporting

confidence: 88%

Erbium‐doped nanocrystalline silicon thin films produced by RF sputtering ‐ annealing effect on the Er emission

Cerqueira

Monteiro

Soares

et al. 2010

Phys. Status Solidi (c)

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In the present work, erbium doped nanocrystalline silicon thin films were produced by reactive magnetron sputtering on glass substrates under different conditions (substrate temperature and Er content). The film structure was studied using Raman spectroscopy. The chemical composition was determined using the RBS technique. All the samples show sharp 4I13/2 → 4I15/2 intra‐4f11 emission of Er3+ related centres with its maximum positioned at the1.54 μm. However, the intensity of this transition (strongly dependent on the chemical composition of the matrix where the nanocrystals are embedded in and also on the structure of the matrix) changes after thermal annealing treatment. For the less crystalline samples our results show an increase of the Er3+ PL intensity and for the highly crystalline ones the Er emission vanishes even at low temperature. This behaviour was studied and explained in this work, on the basis of energy transfer between Si and Er ions (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributedsupporting

confidence: 88%

Erbium‐doped nanocrystalline silicon thin films produced by RF sputtering ‐ annealing effect on the Er emission

Cerqueira

Monteiro

Soares

et al. 2010

Phys. Status Solidi (c)

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“…Recently, efficient Er emission sensitization has also been reported in amorphous Si clusters embedded in silicon nitride, and it has been shown that small dot sizes are essential to effectively enhance Er emission. 17,22,23 However, it is presently unknown whether silicon-rich nitride/Si superlattice structures ͑SRN/Si-SLs͒ would provide an alternative strategy for efficient Er sensitization under optical and electrical pumping. 24 In this letter, we study light emission and Er sensitization via optically excited amorphous Si clusters in Er-doped SRN/Si-SLs ͑Er:SRN/Si-SLs͒ fabricated by direct cosputtering and we show that nanosecond-fast transfer times to Er ions can be achieved when amorphous Si clusters are formed inside nanometer-size layers.…”

mentioning

confidence: 99%

“…Er sensitization in homogeneous SRN samples has been demonstrated and discussed elsewhere. 17,20,22,23 Er ions have been incorporated in the superlattice by direct cosputtering from an Er target. It is important to notice that no Er was intentionally deposited ͑shuttered closed͒ in the Si layers of the superlattice.…”

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confidence: 99%

Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures

Negro

Warga

et al. 2008

Applied Physics Letters

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Erbium-doped silicon-rich nitride/silicon superlattice structures were fabricated by direct magnetron cosputtering deposition on Si substrates. Rapid thermal annealing resulted in the nucleation of small amorphous Si clusters, which efficiently sensitize 1.54 m emission via a nanosecond-fast nonresonant energy transfer process, providing an alternative route toward the fabrication of Si-compatible devices based on Er sensitization.

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“…While SiN x is a particularly interesting host matrix for electrically pumped light-emitting devices, the Er excitation mechanism in silicon nitride films is still not clear. Similarly to the SiO x based samples, the sensitization of Er 3+ ions by Si nanoparticules has been reported in SiN x samples prepared by plasma enhanced chemical vapour deposition ͑PECVD͒ 5 or by magnetron sputtering. 6 However, some works have also demonstrated that indirect excitation of Er 3+ ions could occur via electronic states localized in the SiN x band tail states.…”

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confidence: 82%

Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation

Steveler

Rinnert

Devaux

et al. 2010

Applied Physics Letters

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Er-doped silicon nitride films were obtained by reactive evaporation of silicon under a flow of nitrogen ions and were annealed at temperatures up to 1300°C. Samples were studied by infrared absorption and Raman spectrometries and by transmission electron microscopy. The 1.54 m Er-related photoluminescence ͑PL͒ was studied in relation with the structure with pump excitation at 488 and 325 nm. Steady-state PL, PL excitation spectroscopy, and time-resolved PL were performed. The results demonstrate that Er 3+ ions are indirectly excited both via silicon nanocrystals and via localized states in the silicon nitride matrix.

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Luminescence of Er-doped amorphous silicon quantum dots

Cited by 14 publications

References 10 publications

Erbium‐doped nanocrystalline silicon thin films produced by RF sputtering ‐ annealing effect on the Er emission

Erbium‐doped nanocrystalline silicon thin films produced by RF sputtering ‐ annealing effect on the Er emission

Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures

Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation

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