Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures

Negro, Luca Dal; Li, R.; Warga, J.; Basu, Soumendra N.

doi:10.1063/1.2920435

Cited by 62 publications

(46 citation statements)

References 26 publications

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“…However, because of the growing concern over environmental issues, LEDs using Si have recently been investigated. For example, in the visible region, porous Si [4], Si/SiO 2 superlattice structures [5,6], and Si nanoprecipitates in SiO 2 [7] have been used, and in the infrared region, erbium-doped Si [8] and Si-Ge [9] have been used. However, their emission efficiencies are still low.…”

Section: Introductionmentioning

confidence: 99%

Highly efficient and broadband Si homojunction structured near-infrared light emitting diodes based on the phonon-assisted optical near-field process

2011

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We fabricated a highly efficient, broadband light emitting diode driven by an optical near field generated at the inhomogeneous domain boundary of a dopant in a homojunction bulk Si crystal and evaluated its performance. To fabricate this device, a forward current was made to flow through a Si p-n junction to anneal it. During this process, the device was irradiated with near-infrared light, producing stimulated-emission light using a two-step phonon-assisted process triggered by the optical near field, and the annealing rate was controlled in a self-organized manner. The device emitted light in a wide photon energy region of 0.73-1.24 eV (wavelength 1.00-1.70 μm). The total power of the emitted light with 11 W of electrical input power was as high as 1.1 W. The external power conversion efficiency of the emitted light was 1.3%, the differential external power conversion efficiency was 5.0%, the external quantum efficiency was 15%, and the differential external quantum efficiency was 40%. The dependency of the emitted light power density on the injected current density clearly showed a characteristic reflecting the two-step phonon-assisted transition process.T. Kawazoe ( ) · M.A. Mueed · M. Ohtsu

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Section: Introductionmentioning

confidence: 99%

Highly efficient and broadband Si homojunction structured near-infrared light emitting diodes based on the phonon-assisted optical near-field process

2011

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“…Electronic-photonic integration on Si meets the needs for highbandwidth and low-power-density on-chip interconnects [1,2]. Since Si shows a very inefficient band-to-band radiative recombination due to its indirect band gap nature, erbium-doped silicon dielectrics [3][4][5][6] and silicon Raman effect [7,8] have been used for light emission at the desired wavelength band around 1550 nm. However, the challenge of electrical pumping for the above approaches remains to be solved.…”

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confidence: 99%

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

et al. 2009

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We report the first demonstration of direct band gap electroluminescence (EL) from Ge/Si heterojunction light emission diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to engineer the band structure of Ge to enhance the direct gap luminescence efficiency by increasing the injected electron population in the direct Γ valley. Room temperature EL is observed at the direct gap energy from a Ge/Si p-i-n diode exhibiting the same characteristics of the direct gap photoluminescence (PL) of Ge. The integral direct gap EL intensity increases superlinearly with electrical current due to an indirect valley filling effect. These results indicate a promising future of tensile strained Ge-on-Si for electrically pumped, monolithically integrated light emitters on Si.

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“…Therefore, defects are created rather than Si-nps, after thermal annealing. Moreover, due to the low difusivity of silicon atoms in Si 3 N 4 , a high Si content (>52 at.%) is needed to form Si-nps [59,60]. Because of the low Si content present in the SRN ilms from this work (<46 at.%), as shown above in the XPS results, these ilms can be explained as a sub-stoichiometric nitride with structural defects, as reported in the study of Cabañas-Tay et al [34].…”

Section: Silicon-rich Nitride (Srn) Ilmmentioning

confidence: 99%

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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Luminescent silicon-rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon-rich nitride (SRN) and silicon-rich oxide (SRO) ilms have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO ilms deposited by low-pressure chemical vapor deposition are reviewed and discussed. SRN and SRO ilms, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emiting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO ilms as the dielectric layer. SRN-LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO-LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO-LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.

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Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures

Cited by 62 publications

References 26 publications

Highly efficient and broadband Si homojunction structured near-infrared light emitting diodes based on the phonon-assisted optical near-field process

Highly efficient and broadband Si homojunction structured near-infrared light emitting diodes based on the phonon-assisted optical near-field process

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

Luminescent Devices Based on Silicon-Rich Dielectric Materials

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