Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation

Steveler, Émilie; Rinnert, H.; Devaux, Xavier; Dossot, Manuel; Vergnat, M.

doi:10.1063/1.3521279

Cited by 13 publications

(5 citation statements)

References 15 publications

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“…Its lower band gap and larger density of trap states are in agreement with the need of low injection voltages for applications in light emitting diode (LED) devices [1,2]. Moreover, the Si excess can form Si nano-clusters which contributes to visible photoluminescence but can plays sensitizing role towards rare earth (RE) ions too [3,4].…”

mentioning

confidence: 66%

Fabrication and photoluminescence properties of Tb‐doped nitrogen‐rich silicon nitride films

An¹,

Labbé²,

Morales³

et al. 2012

Phys. Status Solidi C

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International audienceTerbium (Tb) doped nitrogen-rich silicon nitride thinfilms were prepared on [100] Si substrate by reactivemagnetron co-sputtering in pure nitrogen atmosphere.The microstructure and optical properties of the filmswere investigated by means of ellipsometricspectroscopy (ES), atomic force microscopy (AFM),X-ray diffraction (XRD), Raman scattering and Fouriertransform infrared (FTIR) spectroscopies as well as byphotoluminescence (PL) experiments. A notableemission from Tb3+ ions was obtained for theas-deposited layer, while the maximum intensity wasfound from 600 °C-annealed sample. Deducing from PLexcitation (PLE) analysis, a mechanism of excitation ofTb3+ ions was proposed: the band tail states of matrixplay a minor role in the energy transfer process, whilethe host carriers across the optical gap acted as effectivesensitizers for Tb3+ ions

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mentioning

confidence: 66%

Fabrication and photoluminescence properties of Tb‐doped nitrogen‐rich silicon nitride films

An¹,

Labbé²,

Morales³

et al. 2012

Phys. Status Solidi C

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“…The films were prepared by co-evaporation of SiO powder from a thermal cell and of SiO2 powder from an electron beam gun in a high-vacuum chamber with a base pressure equal to 10 -8 Torr. The deposition rate equal to 0.1 nm/s was controlled by a quartz microbalance system and the Transmission Electron Microscopy (images and diffraction) can be found in previous publications [18,19,20]. For this study, the samples were annealed at 1100 °C during 5 minutes under a nitrogen flow in a rapid thermal furnace.…”

Section: Methodsmentioning

confidence: 99%

Low-temperature photoluminescence properties of Nd-doped silicon oxide thin films containing silicon nanocrystals

Steveler

Rinnert

Vergnat

2017

Journal of Luminescence

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The luminescence properties of neodymium-doped silicon oxide thin films containing silicon nanocrystals (Si-nc) were studied as a function of temperature from 10 to 300 K by steady-state and time-resolved photoluminescence (PL) spectrometry. The Nd-related emission at 920 nm, induced by the 4 F3/2→ 4 I9/2 shell transitions, was obtained either with a resonant excitation at 585 nm or with an indirect excitation at 325 nm via Si-nc, which act as sensitizers. A saturation of the neodymiumrelated photoluminescence intensity has been evidenced for indirect excitation thanks to silicon nanocrystals at temperatures below 100 K. According to the Förster model of energy transfer, this saturation is explained by a decrease of the coupling efficiency between Si-nc and rare earth ions at low temperatures, induced by the increase of the silicon nanocrystals lifetime at low temperatures.

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“…The second possible effect, which seems to be dominant, is the formation of Tb clusters, such as those observed in the TEM image in figure 5 at T A =1200 °C and already detected at T A =700 °C. These clusters have a detrimental effect on the PL intensity by the reduction of the number of optically active Tb 3+ ions [79]. Such effect is commonly seen for different rare earth-doped Si-based matrix as Nd:SiN x [80] or Er:SRSO [36].…”

Section: Si-o(to 3 -Lo 3 ) (To 4 -Lo 4 )mentioning

confidence: 97%

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Labbé¹,

An²,

Zatryb³

et al. 2017

Nanotechnology

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Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb ion doped nitrogen-rich silicon oxynitride (NRSON) thin films were fabricated using a reactive magnetron co-sputtering method, with various N flows and annealing conditions, in order to study their structural and emission properties. Rutherford backscattering (RBS) measurements and refractive index values confirmed the silicon oxynitride nature of the films. An electron microscopy analysis conducted for different annealing temperatures (T ) was also performed up to 1200 °C. Transmission electron microscopy (TEM) images revealed two different sublayers. The top layer showed porosities coming from a degassing of oxygen during deposition and annealing, while in the region close to the substrate, a multilayer-like structure of SiO and SiN phases appeared, involving a spinodal decomposition. Upon a 1200 °C annealing treatment, a significant density of Tb clusters was detected, indicating a higher thermal threshold of rare earth (RE) clusterization in comparison to the silicon oxide matrix. With an opposite variation of the N flow during the deposition, the nitrogen excess parameter (N) estimated by RBS measurements was introduced to investigate the Fourier transform infrared (FTIR) spectrum behavior and emission properties. Different vibration modes of the Si-N and Si-O bonds have been carefully identified from the FTIR spectra characterizing such host matrices, especially the 'out-of-phase' stretching vibration mode of the Si-O bond. The highest Tb photoluminescence (PL) intensity was obtained by optimizing the N incorporation and the annealing conditions. In addition, according to these conditions, the integrated PL intensity variation confirmed that the silicon nitride-based host matrix had a higher thermal threshold of rare earth clusterization than its silicon oxide counterpart. Analysis of time-resolved PL intensity versus T showed the impact of Tb clustering on decay times, in agreement with the TEM observations. Finally, PL and PL excitation (PLE) experiments and comparison of the related spectra between undoped and Tb-doped samples were carried out to investigate the impact of the band tails on the excitation mechanism of Tb ions.

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Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation

Cited by 13 publications

References 15 publications

Fabrication and photoluminescence properties of Tb‐doped nitrogen‐rich silicon nitride films

Fabrication and photoluminescence properties of Tb‐doped nitrogen‐rich silicon nitride films

Low-temperature photoluminescence properties of Nd-doped silicon oxide thin films containing silicon nanocrystals

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

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Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation

Cited by 13 publications

References 15 publications

Fabrication and photoluminescence properties of Tb‐doped nitrogen‐rich silicon nitride films

Fabrication and photoluminescence properties of Tb‐doped nitrogen‐rich silicon nitride films

Low-temperature photoluminescence properties of Nd-doped silicon oxide thin films containing silicon nanocrystals

Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

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Product

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Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films