Luminescence of amorphous silicon nanoclusters

Gusev, O. B.; Vainshtein, J. S.; Undalov, Yu. K.; Yeltsina, O. S.; Трапезникова, И. Н.; Terukov, E. I.; Sreseli, O. M.

doi:10.1134/s0021364011170061

Cited by 7 publications

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“…In [63,64], a ncl Si ~2 nm in size in the a SiO x :H matrix were obtained using a dc magnetron in the mix ture (20%SiH 4 + 80%Ar) + O 2 . The oxygen content in the gas mixture at the input to the magnetron working volume varied in the range = 0.15-25 mol %.…”

Section: Study Of the Photoluminescencementioning

confidence: 99%

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Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)

Undalov

Теруков

2015

Semiconductors

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Published data concerning plasma methods of the fabrication and study of silicon nanoclusters ncl Si in crystalline (c SiO 2 ) and amorphous (a SiO x :H) matrices are reviewed. The effect of radio fre quency (RF) and direct current (dc) discharge modulation on the growth kinetics of ncl Si is considered. The results of infrared spectroscopy, mass spectrometry, and laser beam scanning of the plasma composition are analyzed. The behavior of nanoparticles is described depending on their charge and size in plasma under the effect of electric, magnetic, and gravity forces and under the influence of the dynamics of gases contained within the plasma. Infrared spectroscopy data on the a SiO x :H film matrix are analyzed. The photolumines cence properties of ncl Si fabricated using different techniques are described.

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Section: Study Of the Photoluminescencementioning

confidence: 99%

“…In [63,64], the difference between the a ncl Si and nc Si PL spectra was noted. This difference is attrib uted to the fact that a ncl Si in the a SiO x matrix are not characterized by long range atomic order and nc Si in the c Si matrix are characterized by it, even if somewhat distorted at such a size (d ≈ 2 nm).…”

Section: Study Of the Photoluminescencementioning

confidence: 99%