Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO
                x
              :H (0 &lt; x &lt; 2)

Undalov, Yu. K.; Теруков, Е. И.

doi:10.1134/s1063782615070222

Cited by 13 publications

(3 citation statements)

References 60 publications

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“…Also, the main band is accompanied by a highfrequency broad shoulder centered at about 1150 cm À1 (Si-O asymmetric stretching). This shoulder is characteristic of SiO x material with high stoichiometry and merges with the main band at x > 1 [19,20]. Figure 2a shows a band at 880 cm À1 , which is present in the spectra of nanowires synthesized at low substrate temperatures (200-270 8C) and disappears with increasing substrate temperature; this band may be attributed to the Si-O-Si mode in silicon ring (SiO n ) configurations [21].…”

Section: Resultsmentioning

confidence: 99%

Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst

Khmel

Баранов

Zamchiy

et al. 2016

Physica Status Solidi (a)

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Silicon oxide nanowires SiOx were synthesized by the gas‐jet electron beam plasma chemical vapor deposition method. The synthesis of nanostructures was carried out on silicon substrates with thin tin film as a catalyst. The evolution in the morphology of the obtained structures was investigated while changing the substrate temperature in the range 200–415 °C. Dense array of aligned nanowire bundles (microropes) is formed at a temperatures of 335 and 415 °C. With decrease in the temperature to 270 and 245 °C arrays of microropes transform into cocoon‐like structures of nanowires. At a temperature 200 °С, array formed almost entirely consisting of cocoon‐like structures. The results of X‐ray energy dispersive spectroscopy (EDS) of the nanowires show that the ratio of oxygen to silicon is on average Si:O = 1:2.4. At the same time, Fourier Transform Infrared spectroscopy (FTIR) analysis of the obtained nanostructures showed that the synthesized nanowires consist of SiOx with x around 2. Moreover, the composition of the structures remains practically unchanged with the variation of the substrate temperature. The IR spectra show bands due to both Si–OH bonds and water molecules. Measurements of contact angles for water showed that the nanowire film surface synthesized in this work is hydrophilic in nature. When structuring involves the oriented growth microropes, the contact angle is about 20–35°. Decreasing of the substrate temperature and formation of cocoon‐like structures leads to a decrease in the contact angle to 4–12°. The photoluminescence (PL) spectra of nanostructures synthesized at the different substrate temperatures consist of a broad band with a maximum around 2.5 eV when using laser at 325 nm as the exciting source. We assume that the composition of the nanowires is close to SiO2, and the excess of oxygen in structures composition is due to the influence of adsorbed water molecules and hydroxyl groups with the formation of Si–OH bonds. Apparently, these bonds define the photoluminescence spectrum.

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Section: Resultsmentioning

confidence: 99%

Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst

Khmel

Баранов

Zamchiy

et al. 2016

Physica Status Solidi (a)

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“…Moreover, if low-temperature processes (such as ion-plasma, plasma-chemical, etc.) are used to create a silicon structure, it is possible to form [1][2][3][4] amorphous a-SiO x :H films with nanoclusters (ncl-Si), whose size will determine the luminescence region. In case of high-temperature processes at T ≥ 1000 °C, as this occurs during radiation annealing of ion-implanted samples with large doses of silicon [5] or during annealing of nonstoichiometric oxides [5][6][7][8]it is possible to form silicon nanocrystals in the dielectric film matrix.…”

Section: Introductionmentioning

confidence: 99%

“…It was shown in [1,3,4] that by using the modulated plasma of a DC-magnetron in a chamber containing 80 % Ar + 20 % SiH 4 , it is possible to set the number of ncl-Si nanoclusters in amorphous a-SiO x :H films over a wide range, and thus it is easy to control the optical properties of the films. Therefore, it can be interesting to transform amorphous a-SiO x films with nanoclusters into films with silicon nanocrystals by high-temperature annealing.…”

Section: Introductionmentioning

confidence: 99%

Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing

Терехов

Теруков

Undalov

et al. 2020

kcmf

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Amorphous SiOx films with silicon nanoclusters are a new interesting material from the standpoint of the physics, technology, and possible practical applications, since such films can exhibit photoluminescence due to size quantization. Moreover, the optical properties of these structures can be controlled by varying the size and the content of silicon nanoclusters in the SiOx film, as well as by transforming nanoclusters into nanocrystals by means of high-temperature annealing. However, during the annealing of nonstoichiometric silicon oxide, significant changes can occur in the phase composition and the structure of the films. The results of investigations on the crystallization of silicon nanoclusters in a SiOx matrix have shownthat, even a very fast method of annealing using PPA leads to the formation of large silicon crystallites. This also causes the crystallization of at least a part of the oxide phase in the form of silicon hydroxide H6O7Si2. Moreover, in films with an initial content of pure silicon nanoclusters ≤ 50%, during annealing a part of the silicon is spent on the formation of oxide, and part of it is spent on the formation of silicon crystals. While in a film with an initial concentration of silicon nanoclusters ≥ 53%, on the contrary, upon annealing, there occurs a partial transition of silicon from the oxide phase to the growth ofSi crystals Reference 1. Undalov Y. K., Terukov E. I., Silicon nanoclustersncl-Si in a hydrogenated amorphous silicon suboxidematrix a-SiOx:H (0 < x < 2). Semiconductors. 2015;49(7):867- 878. DOI: https://doi.org/10.1134/S10637826150702222. Kim K. H., Johnson E. V., Kazanskii A. G.,Khenkin M. V., Roca P. Unravelling a simple methodfor the low temperature synthesis of siliconnanocrystals and monolithic nanocrystalline thinfilms. Scientific Reports. 2017;7(1) DOI: https://doi.org/10.1038/srep405533. Undalov Y. K., Terukov E. I., Trapeznikova I. N.Formation of ncl-Si in the amorphous matrix a-SiOx-:H located near the anode and on the cathode, usinga time-modulated DC plasma with the (SiH4–Ar–O2)gas phase (Co2 = 21.5 mol%). Semiconductors.2019;53(11): 1514–1523. DOI: https://doi.org/10.1134/S10637826191102284. Terekhov V. A., Terukov E. I., Undalov Y. K.,Parinova E. V., Spirin D. E., Seredin P. V., Minakov D. A.,Domashevskaya E. P. Composition and optical propertiesof amorphous a-SiOx:H films with silicon nanoclusters.Semiconductors. 2016;50(2): 212–216. DOI:https://doi.org/10.1134/S10637826160202515. Terekhov V. A., Turishchev S. Y., Kashkarov V. M.,Domashevskaya E. P., Mikhailov A. N., Tetel’baum D. I.Silicon nanocrystals in SiO2 matrix obtained by ionimplantation under cyclic dose accumulation. PhysicaE: Low-dimensional Systems and Nanostructures.2007;38(1-2): 16–20. DOI: https://doi.org/10.1016/j.physe.2006.12.0306. Terekhov V. A., Turishchev S. Y., Pankov K. N.,Zanin I. E., Domashevskaya E. P., Tetelbaum D. I.,Mikhailov A. N., Belov A. I., Nikolichev D. E., Zubkov S. Y.XANES, USXES and XPS investigations of electronenergy and atomic structure peculiarities of the siliconsuboxide thin film surface layers containing Si nanocrystals.Surface and Interface Analysis. 2010;42(6-7):891–896. DOI: https://doi.org/10.1002/sia.33387. Terekhov V. A., Turishchev S. Y., Pankov K. N.,Zanin I. E., Domashevskaya E. P., Tetelbaum, MikhailovA. N., Belov A. I., Nikolichev D. E. Synchrotron investigationsof electronic and atomic-structure peculiaritiesfor silicon-oxide films’ surface layers containingsilicon nanocrystals. Journal of Surface Investigation.X-ray, Synchrotron and Neutron Techniques. 2011;5(5):958–967. DOI: https://doi.org/10.1134/S102745101110020X8. Sato K., Izumi T., Iwase M., Show Y., Morisaki H.,Yaguchi T., Kamino T. Nucleation and growth of nanocrystallinesilicon studied by TEM, XPS and ESR.Applied Surface Science. 2003;216 (1-4): 376–381. DOI:https://doi.org/10.1016/S0169-4332(03)00445-89. Ledoux G., Gong J., Huisken F., Guillois O., ReynaudC. Photoluminescence of size-separated siliconnanocrystals: Confirmation of quantum confinement.Applied Physics Letters. 2002;80(25): 4834–4836. DOI:https://doi.org/10.1063/1.148530210. Patrone L., Nelson D., Safarov V. I., Sentis M.,Marine W., Giorgio S. Photoluminescence of siliconnanoclusters with reduced size dispersion producedby laser ablation. Journal of Applied Physics. 2000;87(8):3829–3837. DOI: https://doi.org/10.1063/1.37242111. Takeoka S., Fujii M., Hayashi S. Size-dependentphotoluminescence from surface-oxidized Si nanocrystalsin a weak confinement regime. Physical ReviewB. 2000;62(24): 16820–16825. DOI: https://doi.org/10.1103/PhysRevB.62.1682012. Ievlev V. M. Activation of solid-phase processesby radiation of gas-discharge lamps, Russian ChemicalReviews. 2013;82(9): 815–834. DOI: https://doi.org/10.1070/rc2013v082n09abeh00435713. Zimkina T. M., Fomichev V. A. Ultrasoft X-Rayspectroscopy. Leningrad: Leningrad State UniversityPubl.; 1971. 132 p.14. Wiech G., Feldhütter H. O., Šimůnek A. Electronicstructure of amorphous SiOx:H alloy filmsstudied by X-ray emission spectroscopy: Si K, Si L, andO K emission bands. Physical Review B. 1993;47(12):6981–6989. DOI: https://doi.org/10.1103/Phys-RevB.47.698115. Domashevskaya E. P., Peshkov Y. A., TerekhovV. A., Yurakov Y. A., Barkov K. A., Phase compositionof the buried silicon interlayers in the amorph o u s m u l t i l a y e r n a n o s t r u c t u r e s[(Co45Fe45Zr10)/a-Si:H]41 and [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]41. Surface and Interface Analysis.2018;50(12-13): 1265–1270. DOI: https://doi.org/10.1002/sia.651516. Terekhov V. A., Kashkarov V. M., ManukovskiiE. Yu., Schukarev A. V., Domashevskaya E. 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Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

Баранов

Khmel

Zamchiy

et al. 2016

Physica Status Solidi (a)

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In this work, hydrogenated amorphous silicon suboxide (a‐SiOx:H) thin films have been prepared by gas‐jet electron beam plasma chemical vapor deposition method (GJ EBP CVD) at a substrate temperature 260 °C. The argon to monosilane ratio R = [Ar]/[SiH4] was varied and the influence of the ratio R on the structural and optical properties was investigated. In this method, R affects an oxygen concentration in the film of the silicon suboxide. FTIR measurement showed a decrease of the oxygen concentration from 40.7 to 11% with increasing R. The analysis of FTIR spectra showed the containing a large number polysilane (Si–H2)n groups that suggest the material column structure. Optical transmission spectra were recorded to investigate the optical properties and thickness of the a‐SiOx:H thin films. The maximum of the growth rate is 2 nm s−1 at R = 80. The optical bandgap Eg was derived from Tauc plots. It was found that the increase in the oxygen concentration not only leads to the increase optical bandgap, but also to the decrease the refraction index.

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Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)

Cited by 13 publications

References 60 publications

Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst

Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst

Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

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Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)

Cited by 13 publications

References 60 publications

Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst

Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst

Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing

Structural and optical properties of a‐SiOx:H thin films deposited by the GJ EBP CVD method

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Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method