Luminescence in SiO2 induced by MeV energy proton irradiation

Ionoluminescence induced by swift heavy ions in silica and quartz: A comparative analysis

“…The spectra have been in all cases decomposed into four different emission bands, whose peak positions and widths are listed in Table II. All of these bands have been previously reported in the literature and ascribed to substitutional impurities of Fe 3+ (band at 1.65 eV) [18,19], non-bridging oxygen hole centers (band at 1.9 eV) [9,10,20,21], radiative recombination of the selftrapped exciton with an E' center (band at 2.26 eV) [18] and emission from self-trapped excitons (STE, band at 2.7 eV) [20][21][22][23][24][25][26]. It should be noted that some authors [27] have attributed the latter band to ODC-II (oxygen-deficient centers).…”

“…It provides information on the electronic structure of the solid, particularly on intra-gap levels associated to impurity and defect centers, such as those introduced by irradiation. In particular, the luminescence induced by ion-beam irradiation, commonly named ionoluminescence (IL), is an appropriate technique to investigate the microscopic processes accompanying the generation of damage, its kinetic evolution with the irradiation fluence, and the formation of color centers [9][10][11][12][13][14]. IL can be considered as an Ion Beam Analysis (IBA) technique that is complementary to Rutherford backscattering spectrometry (RBS), particle-induced X-ray emission (PIXE), and nuclear reaction analysis (NRA) methods.…”

In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

“…The band at 1.65 eV is ascribed to Fe 3 þ substitutional impurities [45]. 1.9 eV is due to nonbridging oxygen hole color centers (NBOHCs) [5,6,24,46,47]. The 2.26 eV band originates from the radiative recombination of selftrapped excitons (STEs) at E 0 centers [47].…”

“…Luminescence provides information about the upper electronic levels of a material (near the Fermi level), particularly for intra-gap levels associated with impurities and defect centers, such as those introduced by irradiation. The luminescence induced by ion-beam irradiation, commonly named ionoluminescence or ion beam-induced luminescence (IBIL), is a technique capable of acquiring information about intrinsic or pre-existing defects in materials as well as in-situ information about the microscopic processes accompanying the generation of damage from energetic ions, their kinetic evolution with the accumulation with increasing ion fluence, the formation of color centers, and their recovery with thermal annealing [2][3][4][5][6][7][8][9][10][11][12][13][14]. The visible light produced during luminescence is a result of outer shell transitions.…”

Radioluminescence for in situ materials characterization: First results on SiC for fusion applications

“…This in part is due to the difficulty in interpreting the resulting emission spectra. However, despite this limitation, the technique has been successfully employed to assess possible diagnostic window materials [1][2][3], for comprehensive studies of aluminas and silicas, and for breeding ceramics [4][5][6][7][8][9][10][11][12][13][14][15], all for fusion applications. RL may clearly be used as a simple characterization tool, and permit comparison of "material quality" [1], as well as allowing one to monitor in situ, material modification/degradation due to defect formation and aggregation during for example irradiation with an electric field applied [8].…”