Radioluminescence for in situ materials characterization: First results on SiC for fusion applications

Malo, M.; Nagata, Shinji; Tsuchiya, B.; Moroño, Á.; Shikama, Tatsuo; Hodgson, E.R.

doi:10.1016/j.fusengdes.2011.01.071

Cited by 9 publications

(2 citation statements)

References 20 publications

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“…The same asymmetrical peak was also found in the 4H-SiC homoepitaxial layer grown by CVD [ 26 ]. Our measurement result is also consistent with M. Malo’s measurement [ 27 ], where IBIL was used to measure reaction bonded (RB) SiC and CVD SiC with 1 MeV H + ions, and he obtained the IBIL spectrum with a broad band emission and the peak lying at approximately 597 nm. The peak at 2.95 eV (420 nm), which is attributed to the D I defect, is also analyzed, and the position and FWHM of the fitted Gaussian peaks at the 2.95 eV band did not depend on fluence from 1.14 × 10 11 to 1.3 × 10 13 ions/cm 2 and were 2.95–2.957 eV and 0.0688–0.0728 eV, respectively.…”

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confidence: 90%

IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

et al. 2023

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In this paper, DI defects are studied via experiments and calculations. The 2 MeV H+ is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results show that the luminescence intensity decreases rapidly with increasing H+ fluence, which means the losses of optical defect centers. In addition, the evident peak at 597 nm (2.07 eV) is the characteristic peak of 4H-SiC, and the weak peak between 400 nm and 450 nm is attributed to the DI optical center. Moreover, the first-principles calculation of 4H-SiC is adopted to discuss the origin of DI defects. The optical transition of the defect SiC(CSi)2 from q = 0 to q = 1 is considered the experimental value of the DI defect center.

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Section: Resultssupporting

confidence: 90%

IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

et al. 2023

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“…For the same type of material, experiments performed at IMR, Sendai (Japan) during collaborative experiments for 1 MeV proton irradiation show that comparable results are obtained using very different systems, energies, temperatures and dose rates if compared as a function of ionizing dose (fig.4), suggesting a general use of this technique for different irradiation conditions is feasible[9].…”

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Ion/Electron Induced Luminescence for Radiation Damage Process Interpretation and In Situ Material Verification

Malo¹

2015

Physics Procedia

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The Research Centre for Energy, Environment and Technology (CIEMAT), Madrid, Spain, features two installations (2 MeV Van de Graaff electron accelerator and a 60 kV ion implanter) specifically developed for in situ material characterization during irradiation, and focused on the study of volume and surface electrical degradation in insulating materials for fusion applications. These installations have been equipped with optical systems which permit electron and ion beam induced luminescence to be measured at the same time as recording the electrical conductivity. Recent results for combined ion-induced luminescence and surface electrical degradation experiments in alumina confirmed a correlation between conductivity changes and evolution of emission bands with irradiation dose. Similar experiments under electron irradiation in silicon carbide have also shown the usefulness of luminescence for material characterization and evaluation of radiation effects.

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Progress of engineering design of CFETR diagnostics

Liu

2020

Fusion Engineering and Design

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Radioluminescence for in situ materials characterization: First results on SiC for fusion applications

Cited by 9 publications

References 20 publications

IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

Ion/Electron Induced Luminescence for Radiation Damage Process Interpretation and In Situ Material Verification

Progress of engineering design of CFETR diagnostics

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