IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

Abstract

In this paper, DI defects are studied via experiments and calculations. The 2 MeV H+ is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results show that the luminescence intensity decreases rapidly with increasing H+ fluence, which means the losses of optical defect centers. In addition, the evident peak at 597 nm (2.07 eV) is the characteristic peak of 4H-SiC, and the weak peak between 400 nm and 450 nm is attributed to the DI optical center. Moreover, the first-principles calculation of 4H-SiC is adopted to discuss the origin of DI defects. The optical transition of the defect SiC(CSi)2 from q = 0 to q = 1 is considered the experimental value of the DI defect center.

In situ luminescence measurements of GaN/Al2O3 film under different energy proton irradiations

“…In prior research at Beijing Normal University, various experiments have been successfully implemented in the IBIL measurement system to investigate the effects of flux and temperature on the luminescence of low-concentration rare earth elements and defects. [21][22][23][24][25] Branson et al conducted a study on the luminescence of In-GaN/GaN using IBIL, PL and cathodeluminescence measurement methods, and found that luminescence intensity depends on the specific excitation method employed in each measure-ment technique. [18] In this study, IBIL spectra of GaN/Al 2 O 3 at various depths were acquired by adjusting the incident ion energy to adapt to different film thicknesses.…”