&lt;title&gt;Hybrid 256 x 256 LWIR FPA using MBE-grown HgCdTe on GaAs&lt;/title&gt;

Kawahara, Akihiro; Ajisawa, A.; Miyamoto, Keiji; Kanzaki, Masayuki; Sasaki, Tokuhito; Tomono, M.; Oda, Naoki; Shima, Takeshi; Sekihara, Yasunobu

doi:10.1117/12.218241

Cited by 7 publications

(2 citation statements)

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“…Our measured crosstalk of about 50% for the 35-µmpitch diodes is much larger than the crosstalk of less than 10% reported in earlier work [4,8] . In addition to the differences in material parameters, device structures, illumination conditions, short-circuit and open-circuit connection strategies, and crosstalk definition, two important points should be made to account for the values of our obtained crosstalk.…”

Section: Resultscontrasting

confidence: 71%

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Crosstalk of HgCdTe LWIR n-on-p diode arrays

et al. 2009

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Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He–Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.

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Section: Resultscontrasting

confidence: 71%

“…Thus, our obtained results are actually close to the data reported in Refs. [4,8], implying the effectiveness of the frontside illumination geometry for crosstalk study. The crosstalk decreases to below 5% at pitch > 60 µm, indicating that a wide pitch is favorable for the elimination of crosstalk.…”

Section: Resultsmentioning

confidence: 99%