This paper proposes a new thermally isolated pixel structure, having a twice-bent beam structure and eaves structure, suitable for high-resolution uncooled infrared (IR) focal-plane arrays (FPAs). It also describes the properties of test devices, fabricated to verify the effect of the new pixel structure. Although the pixel size of the test devices is 23.5 µm × 23.5 µm, which represents a smaller area by a factor of about 2.5 than the 37 µm × 37 µm pixel size for the 320 × 240 bolometer-type uncooled IRFPA, previously developed by the authors, the test devices have beams with almost the same length as in the previous IRFPA by utilizing the new beam structure. In addition, the cross-sectional area of the beam is reduced. Accordingly, the thermal conductance of the test devices can be reduced by a factor of about 2.5. The eaves structure, which is adopted to increase the fill factor of pixels, improves the responsivity by a factor of 1.3, which is consistent with our calculations. By utilizing the new thermally isolated pixel structure, the test devices with 23.5 µm pixels enable us to achieve thermal sensitivity equivalent to the previous 37 µm pixels.
CdTe(1̄ 1̄ 3̄)B epilayers were grown on Si substrates oriented (112)5° off toward the [1̄ 1̄ 1] direction by molecular beam epitaxy (MBE). A Zn irradiation process was developed in order to obtain a (1̄ 1̄ 3̄)B face. HgCdTe(1̄ 1̄ 3̄)B epilayers were grown on 20 μm-thick CdTe/Si(112) 5° off, and characterized. These layers have double-crystal x-ray rocking curves with full width at half-maximum as low as 64 arc s, and etch pit densities of 4.4×106 cm−2 and 2.6×105 cm−2 for as-grown and thermal-cycle annealed films, respectively. Photodiodes were also fabricated to demonstrate the capability of large-area MBE-HgCdTe/Si focal-plane arrays.
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