4*4 GaAs/AlGaAs optical matrix switches with uniform device characteristics using alternating Delta beta electrooptic guided-wave directional couplers

Komatsu, K.; Hamamoto, Kiichi; Sugimoto, M.; Ajisawa, A.; Kohga, Y.; Suzuki, Akira

doi:10.1109/50.85788

Cited by 34 publications

(7 citation statements)

References 16 publications

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“…In the past 30 years, GaAs and InP-based compound semiconductor materials have played an important role in integrated optical devices [2] , especially in the development of high-speed optical switch [3] . Compound semiconductor based high optical switch mainly employ the electrooptic effect, and the carrier injection effect [4][5][6][7][8] . Because of the small electro-optic coefficient, switches based on electro-optic effect usually have large size or high driving voltage.…”

mentioning

confidence: 99%

Research of high speed optical switch based on compound semiconductor

Wang

Wei

et al. 2009

Chin. Sci. Bull.

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High-speed optical switch and its array are the crucial components of all-optical switching system. This paper presents the analytical model of a total-internal-reflection (TIR) optical switch. By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure, the X-junction TIR switch and the Mach-Zehnder interference (MZI) switch are demonstrated at 1.55 μm. The measured results show that the extinction ratio of both switches exceeds 20 dB. The switching speed reaches the scale of 10 ns.optical switch, total internal reflection, multimode interference, carrier injection Optical fiber communication technology has become the backbone of modern communication network, and formed enormous applications. As a key component of optical fiber communication system, optical switch and its array have been the focus of research and development [1] . High-speed optical switch and its large-scale arrays are essential for optical network based on optical packet switching (OPS). By employing various physical effects and technology, many types of optical switch have been developed. Among them, apart from the most traditional mechanical optical switches, there are many commercial products, e.g. the micro electro mechanical system (MEMS) based switch, the silica or organic polymer based waveguide switch, and the liquid crystal based switch. They have good performances in extinction ratio, insertion loss, polarization dependence and integration. However, most of them have a low switching speed, a magnitude of milliseconds (ms) typically. OPS based network requires that the switching speed reaches a magnitude of nanoseconds (ns), thus the high-speed optical switch and its arrays are very attractive.Compound semiconductor materials are used widely for high-speed microelectronic integrated devices. Besides, they are important material for optoelectronic devices and high-speed optical waveguide devices. Compound semiconductor is a promising platform for the optical and electronic integrated circuits (OEIC). In the past 30 years, GaAs and InP-based compound semiconductor materials have played an important role in integrated optical devices [2] , especially in the development of high-speed optical switch [3] . Compound semiconductor based high optical switch mainly employ the electrooptic effect, and the carrier injection effect [4][5][6][7][8] . Because of the small electro-optic coefficient, switches based on electro-optic effect usually have large size or high driving voltage. On the other hand, similar to the electro-optic effect of LiNbO 3 , the electro-optic coefficient of compound semiconductor is polarization-dependent as well. In the communication wavelength range of 1.31-1.55 μm, the refractive index change induced by the carrier injection effect is about two orders of magnitude greater than that by the electro-optic effect, and it is very easy to obtain a refractive index change as large as

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confidence: 99%

Research of high speed optical switch based on compound semiconductor

Wang

Wei

et al. 2009

Chin. Sci. Bull.

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“…1 The crosstalk and extinction ratio of the device are about Ϫ18 and 17 dB, respectively, which are approximate to those of each SE. 2 These values, as well as the excess loss, were degraded by a ±0.5 m thickness unevenness of the wafer and fabrication error. The characteristics of SE will benefit from deeper etching and wider MMI because more modes will be excited.…”

Section: Experiments and Resultsmentioning

confidence: 99%

“…1͑a͒. 2 Unlike the conventional structure in which SEs are connected by S-bends, total internal reflection ͑TIR͒ mirrors are employed in pairs to connect SEs in our novel folding matrix switch ͓see Fig. 1͑b͔͒.…”

Section: Designmentioning

confidence: 99%

Design and fabrication of compact nonblocking <inline-formula><math display="inline" altimg="none" overflow="scroll"><mn>4</mn><mo>×</mo><mn>4</mn></math></inline-formula> optical matrix switch on silicon-on-insulator by anisotropic chemical etching

Liu

Chen

et al. 2005

Opt. Eng

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Abstract.A folding nonblocking 4 ϫ 4 optical matrix switch in simplified-tree architecture was designed and fabricated on a silicon-on-insulator wafer. To compress chip size, switch elements ͑SEs͒ were connected by total internal reflection mirrors instead of conventional S-bends. For obtaining smooth interfaces, potassium hydroxide ͑KOH͒ anisotropic chemical etching of silicon was employed. The device has a compact size of 20ϫ 3.2 mm 2 and a fast response of 8±1 s. Power consumption of 2 ϫ 2 SE and excess loss per mirror were 145 mW and Ϫ1.1 dB, respectively.

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“…In this section, we study basic configurations of optical switches that use photonic crystals, and analyze the characteristics by FDTD simulation. Thus far, directional-coupler type optical switches have been developed with LiNO 3 or semiconductor materials 14) . These cases, however, require the device to be several mm in length and the switching voltage to be several tens of volts.…”

Section: 2mentioning

confidence: 99%

Micro-lightwave circuits based on photonic crystal

2002

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Micro-lightwave circuit technologies based on photonic crystal slabs were studied to realize integrated photonic node circuits for use in photonic networks. First, a unique optical multi-exposure technique, which is suitable for drawing large-area, two-dimensional, photonic crystal lattice patterns, is introduced here. The relationship between the resolved pattern size and the light-beam wavelength used for exposure is also discussed. Next, a high-density optical interconnection technique with photonic crystal line-defect waveguides and Si channel waveguides is introduced. A lowloss connection structure for both waveguides and their low bending loss characteristics are also discussed. Furthermore, slab-type, photonic crystal-based optical devices, such as channel-drop filters and optical switches, for constructing the photonic node circuits were proposed and their characteristics investigated by FDTD simulations. A high wavelength resolution for the filters and extremely small switching power for the optical switches were predicted. Before fabricating the optical switches, directional couplers based on photonic-crystal slabs were fabricated and the basic properties of complementary power splitting to two output ports were demonstrated. These results strongly support the possibility of realizing integrated photonic node circuits with photonic crystals.

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4*4 GaAs/AlGaAs optical matrix switches with uniform device characteristics using alternating Delta beta electrooptic guided-wave directional couplers

Cited by 34 publications

References 16 publications

Research of high speed optical switch based on compound semiconductor

Research of high speed optical switch based on compound semiconductor

Design and fabrication of compact nonblocking <inline-formula><math display="inline" altimg="none" overflow="scroll"><mn>4</mn><mo>×</mo><mn>4</mn></math></inline-formula> optical matrix switch on silicon-on-insulator by anisotropic chemical etching

Micro-lightwave circuits based on photonic crystal

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