MCT Materials Aspects

Capper, P.

doi:10.1007/978-1-4615-1607-1_10

Cited by 4 publications

(12 citation statements)

References 54 publications

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“…Furthermore, thinner tellurene allows for lower NEP because of its reduced dark current, despite its weaker absorption. The photodetector bandwidth is mainly limited by the carrier lifetime to be 0.57 MHz, comparable to other mid-IR photoconductive detectors 73 . Such performance, represents almost four orders of magnitude improvement in SNR compared to the free-space counterpart 46 .…”

Section: Room-temperature Mid-ir Tellurene Photodetectormentioning

confidence: 65%

2D-material-enabled multifunctional mid-IR optoelectronics

Deckoff-Jones

Lin

et al. 2020

Smart Photonic and Optoelectronic Integrated Circuits XXII

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New narrow-gap two-dimensional (2-D) semiconductors exemplified by black phosphorus and tellurene are promising material candidates for mid-IR optoelectronic devices. In particular, tellurene, atomically thin crystals of elemental tellurium, is an emerging narrow-gap 2-D semiconductor amenable to scalable solution-based synthesis and large-area deposition. It uniquely combines tunable bandgap energies, high carrier mobility, exceptionally large electro-optic activity, and superior chemical stability, making it a promising and versatile material platform for mid-infrared photonics. Here we discuss the design and experimental realization of integrated photonic devices based on tellurene and other 2-D semiconductors specifically for the mid-IR spectral regime based on a chalcogenide glass (ChG) photonic platform.

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Section: Room-temperature Mid-ir Tellurene Photodetectormentioning

confidence: 65%

2D-material-enabled multifunctional mid-IR optoelectronics

Deckoff-Jones

Lin

et al. 2020

Smart Photonic and Optoelectronic Integrated Circuits XXII

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“…The voltage responsivity, R V , of carbon nanotube films, the ratio of the output signal voltage to the input radiation power [33], can be expressed as R V = V P IR = I R P IR , where I is the electric current bias, R is the resistance change with and without IR radiation, and P IR is the IR power radiating onto the film. The characteristic response time (defined as the time interval during which the resistance of the CNT film changed by R(1−1/e) after the laser is turned off) was about 4.4 ms, which is about one order faster than that for carbon nanotube networks [7,10], and several times faster than that of typical commercial micromachined silicon bolometers (∼15 ms) [1].…”

Section: Resultsmentioning

confidence: 92%

“…Infrared (IR) sensing is critical to temperature monitoring and night vision devices, as well as use in medical and industrial applications. The majority of infrared detectors could fall into two categories: thermal and photon [1]. Semiconductor photon detectors usually possess a very fast response and high sensitivity but have the drawback of needing cryogenic cooling.…”

Section: Introductionmentioning

confidence: 99%

A polarized infrared thermal detector made from super-aligned multiwalled carbon nanotube films

et al. 2010

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Carbon nanotube (CNT) films, easily drawn from super-aligned CNT arrays with a large area and a good compatibility with semiconductor technology, have been used as light sensitive materials for infrared (IR) detection. A bolometric CNT detector made from one layer of super-aligned CNT film shows a 15.4% resistance change under 10 mW mm(-2) of IR illumination and a fast characteristic response time of 4.4 ms due to its ultra-small heat capacity per unit area in vacuum at room temperature. Besides the power intensity detection, the anisotropic property of the super-aligned CNT films makes them ideal materials to detect the polarization of IR light simultaneously, which provides great potential in infrared imaging polarimetry. Theoretical analyses have been carried out to investigate the influences of CNT film properties on the responsivity and response time of the detector.

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“…5,6 Despite the aforementioned merits, obtaining high quality MCT wafer is challenging because of the compositional in-homogeneity and generation of various kinds of structural defects during the growth process. [7][8][9][10][11][12] These defects and non-uniformity will nucleate and extend to the top surface resulting in highly defective and uneven surface topography. The surface irregularities, defects and non-stoichiometric surface impurities are considered as the primary contributors to high surface leakage current and therefore, a high-quality defect-free and atomically smooth surface is essential to realize its full potential.…”

mentioning

confidence: 99%

“…The surface irregularities, defects and non-stoichiometric surface impurities are considered as the primary contributors to high surface leakage current and therefore, a high-quality defect-free and atomically smooth surface is essential to realize its full potential. 10,13 In light of this, various surface chemical and mechanical treatments have been reported. Nevertheless, the extremely fragile nature of MCT (week Hg-Te bonds) and less hardness (∼0.66 GPa) and fracture toughness (0.158 MPa.m 1/2 ) complicate the performance of the surface preparation process.…”

mentioning

confidence: 99%

Effect of Ultra Soft CMP Processing Parameters on Topography of HgCdTe Wafer Surfaces

Qasim¹,

Parthiban²,

Das³

2019

ECS J. Solid State Sci. Technol.

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In this study, ultra soft chemical mechanical planarization (CMP) of mercury cadmium telluride (MCT) surface using hydrogen peroxide (H2O2), silica (SiO2) and SDS containing slurry has been demonstrated. Effect of CMP processing parameters, such as platen velocity, the concentration of the oxidiser and abrasive, slurry pH and surfactant types on surface quality (roughness) has been studied. It has been found that the addition of an anionic surfactant (SDS) in the slurry solution effectively assisted in improving the surface quality as compared to the surfactant free counterpart. The CMP processed MCT surfaces have shown significant improvement in the root-mean-square (rms) surface roughness (Rq) and local/global surface planarity as compared to the as-grown MCT surfaces, which had very rough and wavy surface topography. The best rms surface roughness (Rq) of ∼1.6 nm over a scan area of 10 × 10 μm2 has been obtained under optimized slurry chemistry and processing parameters. This Rq value was found to be almost similar with increasing scan area size up to 481 × 361 μm2, an indication of excellent global surface planarity by the ultra soft CMP process.

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MCT Materials Aspects

Cited by 4 publications

References 54 publications

2D-material-enabled multifunctional mid-IR optoelectronics

2D-material-enabled multifunctional mid-IR optoelectronics

A polarized infrared thermal detector made from super-aligned multiwalled carbon nanotube films

Effect of Ultra Soft CMP Processing Parameters on Topography of HgCdTe Wafer Surfaces

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