Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an appealing material solution for active metasurface devices with their large index contrast and nonvolatile switching characteristics. Here we report what we believe to be the first electrically reconfigurable nonvolatile metasurfaces based on O-PCMs. The O-PCM alloy used in the devices, Ge2Sb2Se4Te1 (GSST), uniquely combines giant non-volatile index modulation capability, broadband low optical loss, and a large reversible switching volume, enabling significantly enhanced light-matter interactions within the active O-PCM medium. Capitalizing on these favorable attributes, we demonstrated continuously tunable active metasurfaces with record half-octave spectral tuning range and large optical contrast of over 400%. We further prototyped a polarization-insensitive phase-gradient metasurface to realize dynamic optical beam steering.

Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material which can be directly deposited and patterned on a wide variety of 2-D materials and can simultaneously function as the light guiding medium, a gate dielectric, and a passivation layer for 2-D materials. Besides claiming improved fabrication yield and throughput compared to the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2-D layers. Capitalizing on this facile integration method, we demonstrate a series of highperformance glass-on-graphene devices including ultra-broadband on-chip polarizers, energyefficient thermo-optic switches, as well as graphene-based mid-infrared (mid-IR) waveguideintegrated photodetectors and modulators.

Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure-a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

Hybrid organic-inorganic heterostructures are attracting tremendous attention for optoelectronic applications due to their low-cost processing and high performance in devices. In particular, van der Waals p-n heterojunctions formed between inorganic two-dimensional (2D) materials and organic semiconductors are of interest due to the quantum confinement effects of 2D materials and the synthetic control of the physical properties of organic semiconductors, enabling a high degree of tunable optoelectronic properties for the heterostructure. However, for photovoltaic applications, hybrid 2D-organic heterojunctions have demonstrated low power conversion efficiencies due to the limited absorption from constraints on the physical thickness of each layer. Here, we investigate the ultrafast charge transfer dynamics between an organic polymer:fullerene blend and 2D n-type MoS using transient pump-probe reflectometry. We employ plasmonic metasurfaces to enhance the absorption and charge photogeneration within the physically thin hybrid MoS-organic heterojunction. For the hybrid MoS-organic heterojunction in the presence of the plasmonic metasurface, the charge generation within the polymer is enhanced 6-fold, and the total active layer absorption bandwidth is increased by 90 nm relative to the polymer:fullerene blend alone. We demonstrate that MoS-organic heterojunctions can serve as hybrid solar cells, and their efficiencies can be improved using plasmonic metasurfaces.

Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO2 substrates. Our demonstration provides a way of integrating MoS2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.

Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real‐world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcome these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on‐chip integration with different photonic platforms and do not disrupt their optical performances. Herein, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that uses undoped‐graphene microheaters to thermally and reversibly switch the optical phase‐change material Ge2Sb2Se4Te1 (GSST). An in situ Raman spectroscopy method is utilized to demonstrate, in real‐time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si3N4 integrated photonic circuits with small form‐factor modulators and reconfigurable metasurfaces displaying 2π phase coverage through neural‐network‐designed GSST meta‐atoms. This framework will enable scalable, low‐loss nonvolatile applications across a diverse range of photonics platforms.

We demonstrate a monolithic waveguide sensor integrated with a detector on-chip for mid-infrared absorption spectroscopic sensing. The optical sensing element comprises a chalcogenide glass spiral waveguide, and the detector is a PbTe photoconductor integrated directly with the chalcogenide waveguide. The limit of detection of the sensor for methane gas was experimentally assessed to be 1% by volume. Further optimization of the fabrication process and normalization of the laser power fluctuations should result in a maximum sensitivity of 330 ppmv.

The mid-infrared spectral band (2-20 m) is of significant technological importance for thermal imaging, spectroscopic sensing, and free-space communications. Lack of optical materials compatible with common semiconductor substrates, however, presents a standing hurdle for integrated photonic device development in the mid-infrared domain. Tellurene, atomically thin crystals of elemental tellurium, is an emerging 2-D material amenable to scalable solution-based synthesis. It uniquely combines small and tunable bandgap energies, high carrier mobility, exceptionally large electro-optic activity, and superior chemical stability, making it a promising and versatile material platform for mid-infrared photonics. With these material properties in mind, we propose and design a waveguide-integrated tellurene photodetector and Pockels effect modulator. The photodetector boasts a record room temperature noise equivalent power of 0.03 fW/Hz 1/2 at 3 m wavelength, while the optimized modulator device claims a half-wave voltage-length product (V• L) of 0.23 V• cm and a switching energy of 21.7 fJ/bit; both representing substantial improvements to current state-of-the-art.